CSD25302Q2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CSD25302Q2 is an N-channel enhancement mode vertical DMOS power FET (VFET) that is specifically designed for high-power switching applications. This device offers unique features that make it ideal for use in a wide range of power management, mobile power, and industrial control applications.

The CSD25302Q2 is constructed from highly-efficient vertical DMOS power FETs (VFETs) for unmatched performance and reliability. The VFET technology is a self-adjusting power-MOSFET design that creates a superior device capable of handling high voltage and high current at very low on-resistance. This makes it a very desirable device for a variety of power management, industrial, and mobile applications.

The CSD25302Q2 has a drain-source breakdown voltage of 30V, gate-source breakdown voltage of ±10V, and absorbs a maximum current of 4A and package power dissipation of 0.43W. The on-resistance of the device ranges from 1.2 to 6Ω and is temperature adjustable.

The working principle of the CSD25302Q2 is based on its unique vertical DMOS power FET technology. The VFET employs an offset gate to control the flow of electrons through the channel, which eliminates the need for a gate voltage to control the on/off state of the device. The offset gate design also provides superior on-resistance characteristics, which allows for higher current and lower resistance.

The CSD25302Q2 is used in a variety of applications, including high-power switching applications such as motor controls, robotics, and power management circuits. It is also commonly used in automotive systems and industrial controls. The on-resistance of the device, combined with its other features, makes it an ideal choice for automotive and industrial applications.

The CSD25302Q2 is also used in mobile power applications such as power banks, battery chargers, and cell phone chargers. This device has the ability to provide high current, low on-resistance and low voltage operation, making it a great choice for mobile applications.

Overall, the CSD25302Q2 is a highly efficient and reliable device that is capable of handling up to 4A of current and 0.43W of package power dissipation. Its unique vertical DMOS power FET technology and offset gate design provide superior performance and reliability, making it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference