CSD25485F5T

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The CSD25485F5T is a N-Channel MOSFET with a maximum drain source voltage of 20V, a drain current of 25A (at a drain source voltage 10V) and a gate threshold voltage of 3V. This MOSFET is part of the DR (Dynamic Rectification) product family and is commonly used in Synchronous Rectification, Polarity Protection, Low Side Drive and Solid State Relay applications.

A MOSFET (metal-oxide-semiconductor field-effect transistor) is a transistor built from two thin layers of semiconductor materials, usually silicon and usually referred to as a "gate" and a "channel". A MOSFET works by having the gate control the flow of current in between the drain and the source. A MOSFET is different than a BJT (bipolar junction transistor) in that a BJT uses the electric field from a base region to control the flow of current from the collector to the emitter. The electric field in a bipolar transistor is created by electric currents in the base contacts, while the electric field in a MOSFET is created by a voltage applied to the gate contact.

The CSD25485F5T is a N-Channel MOSFET, meaning that the gate is connected to a layer of n-type semiconductor, and when voltage is applied to the gate a depletion region, framed by positive and negative charges, introduces a larger resistance between the drain and source. This, in turn, increases the current resistance between the drain and source, which prevents current between the two contact areas. As the voltage on the gate is increased, the width of the depletion region increases as well, making it harder for current to flow between the two terminals.

The CSD25485F5T is designed for synchronous rectification and polarity protection applications, where it can be used to switch on and off the power to the load devices. The CSD25485F5T can also be used in low side drive applications, where it can be used to control the voltage on the Source. The CSD25485F5T can also be used in high power Solid State Relays, where it acts as an on/off switch for large amounts of power.

The CSD25485F5T is made up of two halves, a source and a drain, which have a common gate. This gate is connected to the n-type semiconductor material, which is framed between a positive and negative charge. When voltage is applied to the gate, it creates an electric field which increases the width of the depletion region between the drain and the source. As the width of the depletion region increases, it increases the resistance between the drain and the source, thus preventing current from flowing between the two. The CSD25485F5T is rated with the highest drain source voltage of 20V, the maximum drain current of 25A and a gate threshold voltage of 3V.

The CSD25485F5T is a great choice for a number of different applications. It is a reliable, fast and efficient N-Channel MOSFET, capable of handling a maximum drain source voltage of 20V, a drain current of 25A (at a drain source voltage 10V) and a gate threshold voltage of 3V. Its main use is in synchronous rectification and polarity protection, low side drive and solid state relay applications, where it can be used to switch power on and off for the load device.

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