CSD25483F4 Allicdata Electronics
Allicdata Part #:

296-38917-2-ND

Manufacturer Part#:

CSD25483F4

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET P-CH 20V LGA
More Detail: P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD25483F4 datasheetCSD25483F4 Datasheet/PDF
Quantity: 9000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 9000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 198pF @ 10V
Vgs (Max): -12V
Gate Charge (Qg) (Max) @ Vgs: 0.959nC @ 4.5V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 205 mOhm @ 500mA, 8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CSD25483F4 is a single-channel N-channel enhancement mode MOSFET. It uses the advanced high-voltage processes to achieve the power level of 100V and applications such as industrial loads, lighting controls and UPS, making it an ideal choice for power supplies and motor drive systems. CSD25483F4 has good performance in terms of dead time and turn-on time, and its drain-to-source on-resistance, RDS(on), is significantly lower than equivalent products.

The CSD25483F4\'s principal application field is power MOSFET. With the higher breakdown voltage and lower on resistance, the CSD25483F4 has been widely used in distributed power systems, server and telecom power supplies, UPS systems, bridge rectifiers, industrial loads, lighting controls, motor controls and power converters, etc. It has also been used in power management systems, display system and automotive supplies, such as OCP, OVP, SCP and over-temperature protection.

The working principle of CSD25483F4 is based on the MOSFET structure, in which an N-type MOSFET is connected in the middle of a P-well and a VDD power supply. When the gate voltage is higher than the threshold voltage, the channel of the MOSFET is filled with carriers, allowing the current to flow from the source to the drain. When the gate voltage is below the threshold voltage, the channel is not filled with carriers, so the current can not flow from the source to the drain.

The obvious advantage of MOSFET structure is that it can provide a high-impedance control signal while the power device is conducting a high-current. Moreover, the low gate capacitance and low-on resistance can improves switching speed, thermal properties and operation efficiency. In addition, due to its high-reliability and high-scalability, the CSD25483F4 can be used in a wide range of DC and AC resistive, capacitive and inductive loads.

In conclusion, with its superior specifications and features, the CSD25483F4 is a versatile MOSFET that can provide a wide range of current ratings, handling high power and high voltage applications with ease. It is a reliable device that is suitable for many applications, and its structure simplifies the design of the system, making it an ideal choice for designers.

The specific data is subject to PDF, and the above content is for reference

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