
Allicdata Part #: | 296-47203-2-ND |
Manufacturer Part#: |
CSD23285F5 |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 12V |
More Detail: | P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | ![]() |
Quantity: | 5 |
1 +: | $ 0.12000 |
10 +: | $ 0.11640 |
100 +: | $ 0.11400 |
1000 +: | $ 0.11160 |
10000 +: | $ 0.10800 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-PICOSTAR |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 628pF @ 6V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 4.5V |
Series: | FemtoFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD23285F5 is a company developed silicon carbide (SiC) Schottky barrier diode (SBD) product. It uses a cost effective, high performance, and three level topology to achieve high efficiency electronic power conversion. This product provides a highly efficient and reliable solution for many applications, such as renewable energy systems, automotive, industrial, telecommunications, rail, and aerospace.
A Schottky barrier diode is an electronic component that utilizes the contact between a metal and a semiconductor for rectification. The rectification process results in the diode allowing current to flow in one direction but not in the reverse direction. This capability makes the Schottky barrier diode (SBD) a preferred choice for power conversion and other applications where rectification is required.
The CSD23285F5 consists of two Verwey barrier diodes connected in series. The Verwey barrier diodes are basically two parallel-connected diodes that form a single rectification bridge. The two barrier diodes are connected to form one forward-conducting diode and one reverse-conducting diode. The forward conducting diode allows current to flow in only one direction, while the reverse-conducting diode allows current to flow in the opposite direction. This feature allows the SBD to provide rapid switching and rectification while also providing extremely low forward voltage drop.
The CSD23285F5 is designed with a Junction Field Effect Transistor (JFET). This transistor acts as a gate for the diode and allows current to flow through the diode in only one direction. This gate prevents current from flowing in the reverse direction, allowing the current to stay Power where it is supposed to be. Furthermore, the JFET is also used to reduce the forward voltage drop of the SBD, allowing it to achieve higher power conversion efficiency.
The CSD23285F5 also utilizes a three level topology. The three level topology allows the SBD to be operated in multiple operating modes, such as forward, reverse, and short circuit. At the forward mode, the SBD operates at a low voltage drop and provides a high level of efficiency. At the reverse mode, the diode blocks current flow, allowing rectification to occur. At the short circuit mode, the SBD operates at a higher voltage drop, allowing current to flow while simultaneously providing protection against short circuit conditions.
The CSD23285F5 also offers a wide range of applications, such as renewable energy systems, automotive, industrial, telecommunications, aerospace and railway applications. For example, the SBD can be used for DC/DC Conversion, DC/AC Inverter, Uninterruptible Power Supply (UPS), Static Transfer Switch (STS), Motor Control, Grid-connected Inverters, and Rectifier applications. This product has been designed to offer an extremely efficient and reliable solution for a multitude of applications.
The CSD23285F5 is a highly efficient, reliable and cost effective solution for all power conversion applications. The device is able to achieve extremely low forward voltage drop, allowing high current to be drawn without compromising power efficiency. Furthermore, the three level topology allows the SBD to be operated in multiple operating modes, offering more versatility and flexibility for applications. As such, the CSD23285F5 is a great choice for anyone in need of a reliable, efficient and cost effective solution.
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