Allicdata Part #: | 296-38338-2-ND |
Manufacturer Part#: |
CSD23202W10T |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 12V 2.2A 4DSBGA |
More Detail: | P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DS... |
DataSheet: | CSD23202W10T Datasheet/PDF |
Quantity: | 500 |
250 +: | $ 0.19969 |
500 +: | $ 0.16895 |
750 +: | $ 0.14591 |
1250 +: | $ 0.13056 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 4-UFBGA, DSBGA |
Supplier Device Package: | 4-DSBGA (1x1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 512pF @ 6V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD23202W10T is a N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It operates at a voltage rating of 28V and a maximum drain current of 200A. It is a high-voltage level MOSFET and is commonly used in switching applications. The device is also suitable for hot-swap applications and is designed to handle high transient currents with minimum overshoot and undershoot. The CSD23202W10T is one of the most powerful MOSFETs available in the market and has a wide range of applications in industrial and automotive systems.
The CSD23202W10T is a 3-terminal device and it comprises of a gate, source and drain. The gate is insulated from the source and drain and operates in a field-effect mode. In this field-effect mode, no current flows between the gate and source until the gate voltage reaches a certain level. This is known as a "threshold voltage". Once the voltage reaches the threshold voltage, a channel is created between the source and drain and current can then flow. The current flow is regulated by the gate voltage, which can be controlled with a small electric current.
The CSD23202W10T is a fast switching device and has a low gate-drain capacitance. The gate-drain capacitance determines the speed of the MOSFET and the CSD23202W10T has a low gate-drain capacitance and therefore can switch faster than other MOSFETs. The device also has a low on-resistance and can switch a large amount of current. Consequently, the CSD23202W10T is ideal for high-current switching applications.
The CSD23202W10T is used in high-power, high-voltage applications such as motor control, battery management, power rail switching and power distribution. The device is also used in synchronous rectification and hot-swap applications. In motor control applications, the device is used to switch between forward and reverse rotation of the motor. In battery management applications, the device is used to switch off the battery when the voltage drops below critical levels. In power rail switching and power distribution applications, the device is used to switch between different power rails while maintaining electrical isolation. In synchronous rectification applications, the device is used to increase power supply efficiency while reducing power losses. Finally, in hot-swap applications, the device is used to switch on and off power with minimal voltage spikes.
Overall, the CSD23202W10T is an advanced N-Channel MOSFET. It is very fast in switching, has low gate-drain capacitance and low on-resistance. It is a high-voltage level device and is mainly used in high-power, high-voltage applications such as motor control, battery management, power rail switching and power distribution. It is also used in synchronous rectification and hot-swap applications. The CSD23202W10T is a very powerful and reliable device and is becoming increasingly popular in the market.
The specific data is subject to PDF, and the above content is for reference
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