CSD23381F4

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Package / Case:	3-XFDFN
Supplier Device Package:	3-PICOSTAR
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	236pF @ 6V
Vgs (Max):	-8V
Gate Charge (Qg) (Max) @ Vgs:	1.14nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	175 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.3A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD23381F4 Application Field and Working PrincipleThe CSD23381F4 is a Single N-channel MOSFET that is widely used in electronic devices due to its flexibility and wide range of applications. This type of MOSFETs is considered to be a very power efficient component, as it can be used with a variety of power supplies and amplifiers. It\'s also widely used for switching and modulation purposes, as it features a low on-resistance and minimal power dissipated to the load. This article looks into the main application field, as well as the working principle of a CSD23381F4.Application FieldAs the CSD23381F4 is a Single N-channel MOSFET, its main applications are those where high efficiency and fast switching are desired. It can be used as a power switch in electronic devices, such as motor controllers, power supplies, and DC-DC converters. Additionally, it can be used as part of a circuit to control current flow, such as a current-limiting circuit or a switch-mode power supply. Furthermore, it can be used in a switching circuit to regulate a specific voltage or current, or to provide isolation or protection from high or low voltages or currents. Due to its low power loss and fast switching, the CSD23381F4 can also be used as part of a music or audio amplifier. It\'s useful for controlling the volume, tone, or power of the output audio signal. Additionally, it can be used to create necessary waveshaping effects, such as fuzz or overdrive.Working PrincipleThe CSD23381F4 is based on the principle of a metal-oxide-semiconductor field effect transistor (MOSFET). It is a component that requires only a low electrical charge to switch "on" or "off". It works by allowing a current to flow between its source and drain terminal when an electrical field is applied between its gate and source terminals. When the gate potential is negative, it is said to be off, and no current flow occurs. However, when the gate-source voltage is positive, the device is said to be on, and a current flows between the source and drain terminals. The amount of current is determined by the voltage applied to the gate. The higher the voltage, the wider the channel through which current flows becomes. The CSD23381F4 is highly efficient, as it has relatively low power loss when turning off, and generates minimal heat during operation. Additionally, its design provides for low on-resistance, which results in a small voltage drop, therefore increasing its efficiency.ConclusionThe CSD23381F4 single N-channel MOSFET has a wide range of applications, and is generally chosen for its high efficiency and fast switching features. It works on the principle of a MOSFET, based on the effect of an electrical field applied between its gate and source terminals. Its low power loss, low on-resistance, and minimal heat generation make it a great option for use in electronic devices or audio amplifiers.

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