
CSD23202W10 Discrete Semiconductor Products |
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Allicdata Part #: | 296-40000-2-ND |
Manufacturer Part#: |
CSD23202W10 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 12V 2.2A 4DSBGA |
More Detail: | P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DS... |
DataSheet: | ![]() |
Quantity: | 15895 |
1 +: | $ 0.11000 |
10 +: | $ 0.10670 |
100 +: | $ 0.10450 |
1000 +: | $ 0.10230 |
10000 +: | $ 0.09900 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 4-UFBGA, DSBGA |
Supplier Device Package: | 4-DSBGA (1x1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 512pF @ 6V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD23202W10 Application Field and Working Principle
The CSD23202W10 is a single enhancement-mode, N-Channel MOSFET manufactured by Cree Inc. These devices require gate drive supplies between five and ten volts and they conduct in any package orientation (vertical, horizontal, or even upside down). The CSD23202W10 provides a wide variety of design flexibility and cost-effectiveness combining a low gate charge, low Vgs(th) with a low on-state resistance, high switch speed and an excellent avalanche capability.
The main application for the CSD23202W10 is in power management, where it can act as a quick switch for high current loads, such as motors or lamps. This type of MOSFET is also used as a semiconductor-based switch to control small DC loads, such as for small motors, alarms, fans, and relays. Additionally, it can be used in power supply applications as an output switch device. It is often used to drive inductive loads, such as relays and solenoids, as well as in wireless applications, such as cell phone power saving, Bluetooth module, etc. The FET can also be used in high frequency applications, such as Class D and Class T audio amplifiers.
The basic operation of the CSD23202W10 is similar to that of all MOSFETs. It switches between on and off states depending on the voltage applied to its gate terminal. When the gate voltage is above the threshold voltage (Vgs(th)) the MOSFET will be in the on state, and when the gate voltage drops below the threshold voltage the MOSFET will turn off. It is important to note that the current passing through the MOSFET must be limited by a current limiting device such as a resistor or diode.
The maximum safe operating area for the CSD23202W10 device is characterized in the data sheet. It is important to ensure that the current and voltage ratings are not exceeded as this may result in device destruction. The device also has a power dissipation limitation. If exceeded, can result in the device overheating.
Overall, the CSD23202W10 MOSFET is a cost effective and reliable device offering good performance under all load conditions with a wide variety of applications in power management, switch control, motor drive and wireless applications.
The specific data is subject to PDF, and the above content is for reference
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