CSD23285F5T Allicdata Electronics
Allicdata Part #:

296-44809-2-ND

Manufacturer Part#:

CSD23285F5T

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: 12V P-CHANNEL FEMTOFET MOSFET
More Detail: P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD23285F5T datasheetCSD23285F5T Datasheet/PDF
Quantity: 17250
1 +: $ 0.21000
10 +: $ 0.20370
100 +: $ 0.19950
1000 +: $ 0.19530
10000 +: $ 0.18900
Stock 17250Can Ship Immediately
$ 0.21
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 6V
Vgs (Max): -6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Series: FemtoFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD23285F5T is a high-power, fast-acting N-channel MOSFET that is used in a variety of applications. It is a single-channel device, meaning it can only be used to control one load at a time. The CSD23285F5T is most often used in automotive, power management, and telecom applications. This MOSFET can operate at very high currents, making it ideal for high-power applications.

The CSD23285F5T is a high-current device that is able to operate at very high temperatures. The CSD23285F5T has a maximum drain-source voltage of 30V, a static drain-source on-resistance of 2.2mΩ, and a maximum drain current of 250A. Furthermore, the CSD23285F5T is able to operate at gate voltages as low as 4V, making it a very efficient device.

The working principle of the CSD23285F5T is relatively simple. When a voltage is applied to the Gate terminal of the device, it turns on the drain current, ensuring a fast switching time. The higher the gate voltage, the more current is passed through the device. The Drain-Source voltage then controls the amount of current that the device can pass. When the Drain-Source voltage is increased, the maximum drain current is increased as well. This ensures that the device is capable of operating at high currents.

The CSD23285F5T has a wide range of applications due to its high-powered characteristics. It is commonly used in solar power systems, as it can quickly turn on and off large loads. It is also used in motor control circuits, as it can provide high currents and fast switching times necessary for electric motors. In addition, it is used to control battery chargers and uninterruptible power supplies, which require high-power and long-term reliability.

The CSD23285F5T is a powerful, reliable MOSFET that is suitable for a variety of applications. It can be used to quickly switch high-power loads, making it ideal for use in automotive, power management, and telecom applications. With its low gate voltage requirements and high-current ratings, the CSD23285F5T is an excellent choice for applications that require reliable, long-term performance.

The specific data is subject to PDF, and the above content is for reference

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