Allicdata Part #: | 296-40001-2-ND |
Manufacturer Part#: |
CSD23203W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 8V 3A 6DSBGA |
More Detail: | P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DS... |
DataSheet: | CSD23203W Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 6-UFBGA, DSBGA |
Supplier Device Package: | 6-DSBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 914pF @ 4V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 19.4 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD23203W is a MOSFET (metal oxide semiconductor field-effect transistor) manufactured by Texas Instruments. It is a high-voltage, N-channel MOSFET designed for use in portable, low-voltage power circuits. The device operates with a breakdown voltage of 30 volts and has an on-resistance as low as 350Ω. CSD23203W is a high-efficiency MOSFET that can be used in a variety of portable power applications such as automotive, industrial, communications, and computer.
A MOSFET is a type of field-effect transistor that operates by using the electric field of an electrically charged gate to control the current flowing through the device. The gate of the MOSFET is insulated from the source and drain terminals, allowing only a voltage to control the current. The gate of a CSD23203W device has an oxide layer which provides insulation between the gate and the rest of the device. The gate is then connected to the power source through a ferroelectric gate dielectric.
The working principle of CSD23203W is simple. It utilizes a field effect to control the amount of current passing through the device. By supplying a voltage to the gate of the MOSFET, the electric field induces a reverse bias that reduces the current flow through the device. The higher the gate voltage, the greater the decrease in current flow. The gate voltage is controlled by an external power source.
The CSD23203W MOSFET has a wide range of applications. It is ideally suited for low-voltage, high-current, power management applications. It can be used for DC-DC converters, power supplies, switching power, and energy storage and recovery applications. The device also has excellent thermal stability and can withstand temperatures up to 150°C. The device is capable of operating in an extreme environment, making it suitable for automotive, industrial and medical applications.
The CSD23203W is also suitable for automotive and industrial applications because it can withstand high temperatures, shock and vibration. Due to the insulated gate of the device, it is suitable for high power applications such as lighting, vehicle, and motor control. The device also has a low gate charge, meaning it can be switched quickly, making it an ideal choice for high-speed switches, power switches, and motor-power control.
In conclusion, the CSD23203W MOSFET is a high-efficiency and low-voltage MOSFET that can be used in a variety of portable power and industrial applications. The device is capable of operating in extreme temperatures and can handle high current levels. It is also able to quickly switch, making it suitable for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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