Allicdata Part #: | 296-47005-2-ND |
Manufacturer Part#: |
CSD22206WT |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CHANNEL 8V 5A 9-DSBGA |
More Detail: | P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSB... |
DataSheet: | CSD22206WT Datasheet/PDF |
Quantity: | 2500 |
250 +: | $ 0.39158 |
500 +: | $ 0.33327 |
750 +: | $ 0.29161 |
1250 +: | $ 0.26662 |
Vgs(th) (Max) @ Id: | 1.05V @ 250µA |
Package / Case: | 9-UFBGA, DSBGA |
Supplier Device Package: | 9-DSBGA (1.5x1.5) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2275pF @ 4V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 14.6nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD22206WT is a field-effect transistor (FET) used for a variety of applications, including motor and power control, audio amplifier stages, and in other low-voltage and high-current applications. It is specifically suited to operate in switching applications, as it provides a low on-state resistance, high drain current, and high gain.
The CSD22206WT is a single-channel enhancement mode N-channel MOSFET, which means it is operated using voltage rather than current. The MOSFET, which is often abbreviated as FET, contains a gate terminal, a source terminal, and a drain terminal, which are all connected by an insulated gate.
The FET works by passing electrons through a conducting channel between the source and drain terminals when the gate terminal is triggered. This is unlike an ordinary transistor, which uses current to control the movement of electrons from the source to the drain. The CSD22206WT is optimized for low on-state resistance, high drain current, and high gain, allowing for fast switching and high current capacity.
The CSD22206WT is designed to operate in a wide range of voltage and current applications. It can handle both low-voltage and high-current applications, making it suitable for a wide range of applications. It can be used as a switch, an amplifier, and even a protection device.
The MOSFET is widely used in motor control applications, such as DC motors and brushless DC motors, as well as in power control applications. In power control, the FET can be used as a voltage regulator, which can reduce fluctuations in voltage. It can also be used in the control of lighting, such as LED lighting, and in audio amplifier stages.
The CSD22206WT is particularly suited to switch-mode power supplies, where it is used to regulate the flow of power from a power source to the load. It can be used to achieve extremely high efficiency, and its high drain current capability makes it suitable for high-current applications.
The CSD22206WT is also used for protection against overvoltage, overcurrent, and short-circuit conditions. It can be used in applications such as circuit protection, where it is used to provide protection against overcurrent and short-circuit conditions.
In summary, the CSD22206WT is a single-channel enhancement mode N-channel MOSFET that is optimized for low on-state resistance, high drain current, and high gain. It is suitable for a wide range of applications, including motor control, power control, voltage regulation, lighting control, and audio amplification. It is particularly suited to switch-mode power supplies and circuit protection, where it provides protection against overvoltage, overcurrent, and short-circuit conditions.
The specific data is subject to PDF, and the above content is for reference
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