Allicdata Part #: | 296-47093-2-ND |
Manufacturer Part#: |
CSD22205LT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 8V 7.4A 4-PICOSTAR |
More Detail: | P-Channel 8V 7.4A (Ta) 600mW (Ta) Surface Mount 4-... |
DataSheet: | CSD22205LT Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 1.05V @ 250µA |
Package / Case: | 4-XFLGA |
Supplier Device Package: | 4-PICOSTAR |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 4V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 9.9 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.A field effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current within a semiconductor. Field effect transistors are divided into two categories: junction FETs (JFETs) and metal oxide semiconductor FETs (MOSFETs). The CSD22205LT is an example of a MOSFET. In this article, we will be discussing its applications and working principles.
Applications of CSD22205LT
The CSD22205LT is a type of n-channel MOSFET. This type of FET is commonly used in switching applications, because they are able to quickly switch high voltages while dissipating very little power. They are also used in amplifying applications, because they have low noise. Additionally, these FETs are used in power conversion applications such as DC/DC converters, switched mode power supplies, and solar energy converters. The CSD22205LT is particularly suitable for these applications because it has a high current handling capacity and a low on-resistance.
Working Principle of CSD22205LT
MOSFETs work by using an electrostatic field to influence the flow of charge between two terminals, called source and drain. This is accomplished with a third terminal, called the gate, which is separated from the other two terminals by an insulator. When a voltage is applied to the gate, it creates an electric field that changes the shape and location of the channel in the insulator. By controlling the voltage applied to the gate, the amount of current flowing between the source and drain is controlled. This is why MOSFETs are commonly used in switching applications – they can quickly switch high voltage and low current with very little power loss.
The CSD22205LT is a particularly efficient MOSFET because of its low on-resistance and high current handling capacity. Its low on-resistance means that it can switch high voltages while dissipating very little power, making it ideal for power conversion applications. Additionally, its high current handling capacity makes it suitable for amplifying applications, as it can handle large currents without generating excessive noise.
Conclusion
The CSD22205LT is an n-channel MOSFET that is commonly used in switching, amplifying, and power conversion applications. It is particularly suitable for these applications because of its low on-resistance and high current handling capacity. By using an electrostatic field to influence the flow of charge between source and drain, the CSD22205LT is able to quickly switch high voltages and low currents while dissipating very little power.
The specific data is subject to PDF, and the above content is for reference
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