CSD25481F4

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CSD25481F4 Application Field and Working Principle

CSD25481F4 is a type of Insulated Gate Bipolar Transistor (IGBT) module consisting of two N-channel IGBTs and two fast diodes. It is a semiconductor power device widely used in the traction system of high-speed trains and electrical buses.

IGBT is a mix of junction FET (JFET), MOSFET, bipolar transistor and thyristor. Although its structure is complex, its working principle is relatively simple.

This IGBT module owns the following features：

• Low switching loss;
• Low crock effective current;
• Soft switching.

In this article, the application fields and working principle of IGBT module CSD25481F4 are discussed in detail.

Application Fields

Due to its low switching loss, low crock effective current and soft switching features, CSD25481F4 IGBT module has been widely applied in motion control, vehicles and in the traction system of high-speed trains and electrical buses.

In motion control, CSD25481F4 IGBT module is applied to adjust the speed of a motor, which requires fast switching speed. Moreover, the low switching loss can effectively reduce the thermal energy convergence of the motor driver module and extend its heat dissipation time.

The CSD25481F4 IGBT module is also used for the AC/DC DC/DC conversion of electric vehicles with the high current converter switch. Its soft switching can reduce the switching power loss and meet the high current requirements.

Last but not least, CSD25481F4 IGBT module is used as a key component in the traction system of high-speed trains and electrical buses, which requires high voltage, currents and reliable logic control switch. CSD25481F4 is a perfect choice because of its low crock effective current, fast switching speed and soft switching features.

Working Principle

Basically, the working principle of IGBT module CSD25481F4 is the same as that of other Insulated Gate Field-effect Transistors (IGFETs). A voltage is applied between the source-to-gate and source-to-drain regions of the device, causing the flow of electric current.

The application of a positive voltage between the gate and source terminals will cause the device to turn on. At the same time, the positive voltage attracts electrons from the n-type substrate, forming an electron channel between the source and drain terminals. As a result, a large current can flow from the source to the drain.

On the other hand, a negative voltage between the Gate and Source terminals will deplete the electron channel and reverse biased the substrate, thus cutting off the current in the device. This is the working principle of CSD25481F4 IGBT module.

Conclusion

CSD25481F4 IGBT module is widely applied in motion control, vehicles, and the traction system of high-speed trains and electrical buses, due to its low switching loss, low crock effective current and soft switching features. Its working principle is relatively simple and it uses the same principle as other IGFETs, where a voltage is applied between the source to gate and source to drain regions of the device to form an electron channel, allowing a large current to flow.

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