
Allicdata Part #: | DMN3026LVTQ-7DITR-ND |
Manufacturer Part#: |
DMN3026LVTQ-7 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 6.6A TSOT26 |
More Detail: | N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TS... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.11230 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 643pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN3026LVTQ-7 is a low-voltage, low-threshold, P-Channel MOSFET that offers power efficiency and reliability. The DMN3026LVTQ-7 is usually packaged in a 12-pin SOIC or 14-pin TO-220 package, and its maximum drain current is rated to 6A. With its low threshold voltage, fast switching speed and low capacitance, the DMN3026LVTQ-7 is suitable for various application fields.
The DMN3026LVTQ-7 is typically used in power switch application, such as DC-DC Converter, Motor Controls, Load switches and General Switching applications. In addition, the DMN3026LVTQ-7 is an ideal device for low voltage, low frequency power supply and audio power amplifier application. Furthermore, the DMN3026LVTQ-7 can also be used as a low-resistance, low-noise, low-power boost switch for portable devices, such as laptop computers, karaoke machines and tablet PCs.
The working principle of the DMN3026LVTQ-7 is that the power MOSFET controls the on/off state of an electronic circuit by changing the current flow between the source and the drain. When the voltage between the source and the gate is positive, the current between the source and the drain increases, and the MOSFET is turned on. When the gate voltage is zero or negative, the current between the source and the drain decreases, and the MOSFET is turned off. Moreover, since the gate voltage is responsible for the on/off state of the MOSFET, the DMN3026LVTQ-7 provides fast switching speed, is low power consumption and enhanced noise immunity.
In conclusion, the DMN3026LVTQ-7 is a low-voltage, low-threshold P-Channel MOSFET designed for efficient and reliable power switching applications. Its low voltage threshold and high current drive capabilities, along with its fast switching speed and low capacitance, makes the DMN3026LVTQ-7 an ideal choice for a wide range of applications. By understanding its working principle, users can better utilize its features for their applications.
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