DMN3026LVTQ-7 Allicdata Electronics
Allicdata Part #:

DMN3026LVTQ-7DITR-ND

Manufacturer Part#:

DMN3026LVTQ-7

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 6.6A TSOT26
More Detail: N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TS...
DataSheet: DMN3026LVTQ-7 datasheetDMN3026LVTQ-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11230
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN3026LVTQ-7 is a low-voltage, low-threshold, P-Channel MOSFET that offers power efficiency and reliability. The DMN3026LVTQ-7 is usually packaged in a 12-pin SOIC or 14-pin TO-220 package, and its maximum drain current is rated to 6A. With its low threshold voltage, fast switching speed and low capacitance, the DMN3026LVTQ-7 is suitable for various application fields.

The DMN3026LVTQ-7 is typically used in power switch application, such as DC-DC Converter, Motor Controls, Load switches and General Switching applications. In addition, the DMN3026LVTQ-7 is an ideal device for low voltage, low frequency power supply and audio power amplifier application. Furthermore, the DMN3026LVTQ-7 can also be used as a low-resistance, low-noise, low-power boost switch for portable devices, such as laptop computers, karaoke machines and tablet PCs.

The working principle of the DMN3026LVTQ-7 is that the power MOSFET controls the on/off state of an electronic circuit by changing the current flow between the source and the drain. When the voltage between the source and the gate is positive, the current between the source and the drain increases, and the MOSFET is turned on. When the gate voltage is zero or negative, the current between the source and the drain decreases, and the MOSFET is turned off. Moreover, since the gate voltage is responsible for the on/off state of the MOSFET, the DMN3026LVTQ-7 provides fast switching speed, is low power consumption and enhanced noise immunity.

In conclusion, the DMN3026LVTQ-7 is a low-voltage, low-threshold P-Channel MOSFET designed for efficient and reliable power switching applications. Its low voltage threshold and high current drive capabilities, along with its fast switching speed and low capacitance, makes the DMN3026LVTQ-7 an ideal choice for a wide range of applications. By understanding its working principle, users can better utilize its features for their applications.

The specific data is subject to PDF, and the above content is for reference

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