DMN3021LFDF-13 Allicdata Electronics
Allicdata Part #:

DMN3021LFDF-13-ND

Manufacturer Part#:

DMN3021LFDF-13

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 11.8A UDFN2020-6
More Detail: N-Channel 30V 11.8A (Ta) 2.03W (Ta) Surface Mount ...
DataSheet: DMN3021LFDF-13 datasheetDMN3021LFDF-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.08667
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.03W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 706pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN3021LFDF-13 is a common-gate dual N-channel Enhancement-Mode power MOSFET from Diodes Inc. It is designed to be used as a power switch in a variety of applications.

The DMN3021LFDF-13 is part of the Diodes Inc. DMN series of MOSFET transistors. It is a dual N-channel Enhancement-Mode power MOSFET. It has been designed for use as a power switch in a variety of applications, including power regulators, lighting control and DC-DC converters.

The DMN3021LFDF-13 is a very versatile device, as it has a wide voltage and current range. Its maximum drain-source voltage (VDS) is 30 V and maximum drain current (ID) is 20 A, making it suitable for a large number of applications. The device is also very efficient, with a very low gate drive power of 1.5 W and a low gate-source capacitance of 5.6 pF. This means that it is suitable for high-speed switching applications, such as DC-DC converters.

The working principle of the DMN3021LFDF-13 is relatively simple. When a gate voltage (VGS) is applied to the device, it turns on, allowing current to flow from drain to source. The device is then in an "on" state, where current is allowed to flow from drain to source. When the gate voltage is removed, the device turns off and current is no longer allowed to flow from drain to source.

As an Enhancement Mode power MOSFET, the DMN3021LFDF-13 can be used in a variety of applications. It is highly suitable for use as an electronic switch, for both DC and AC applications. It can also be used as a power regulator, light dimmer and in other DC-DC power conversion applications, such as buck and boost converters. Furthermore, it can be used in switching power supplies, DC motor control and other motor control applications.

In summary, the DMN3021LFDF-13 from Diodes Inc. is a common-gate dual N-channel Enhancement-Mode power MOSFET, which is highly suitable for use as an electronic switch or power regulator for a range of applications. It has a wide voltage and current range and low gate drive power, making it highly efficient and suitable for high-speed switching applications. This means that it is suitable for a variety of applications, such as power regulators, switching power supplies, DC motor control and other motor control applications.

The specific data is subject to PDF, and the above content is for reference

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