Allicdata Part #: | DMN3025LFDF-7-ND |
Manufacturer Part#: |
DMN3025LFDF-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 9.9A UDFN2020-6 |
More Detail: | N-Channel 30V 9.9A (Ta) 2.1W (Ta) Surface Mount U-... |
DataSheet: | DMN3025LFDF-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 641pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20.5 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN3025LFDF-7 transistor is a part of a large family of field effect transistors (FETs) that have come to revolutionize modern digital electronics. Specifically, this type is a single MOSFET, meaning that it is made up of a single metal-oxide-semiconductor structure. As is characteristic of FETs, the current flow through the transistor is controlled by a “gate”, which determines whether the transistor is “on” or “off”. The gate is insulated from the material by a layer of oxide, and its voltage determines the current flowing through the transistor. This voltage can be controlled by an external circuit, making the transistor very useful for its application in digital electronics.
The DMN3025LFDF-7 transistor is designed for general-purpose use, such as power management applications and switching circuits. As such, it has a very broad range of applications. This includes anything from powering simple LEDs to controlling complex power grids. The transistor is a low-power device, making it well suited for battery powered designs or applications where power consumption needs to be limited.
In terms of its working principle, the DMN3025LFDF-7 is a very simple device. It is made up of four layers: source, drain, gate, and substrate. The source layer is where current enters the transistor, and it is connected to the drain. The gate is isolated from the source and drain by the oxide layer, and its voltage determines the current flow through the transistor. The substrate is where the transistor is mounted on a PCB, and it also helps to drain away any excess current from the transistor.
To control the current flow through the DMN3025LFDF-7 transistor, it is necessary to apply a voltage to the gate. This voltage is typically called the “gate-source voltage”, or V GS . Depending on the voltage applied, the transistor will either be “on” or “off”. When the transistor is “on”, current will flow from the drain to the source and through whatever circuit the device is connected to. When the transistor is “off”, no current will flow through the device. This makes the DMN3025LFDF-7 a very useful component for switching simple digital circuits.
Overall, the DMN3025LFDF-7 is a versatile transistor designed for general-purpose use. It has a wide range of applications, and its simple structure makes it easy to use. Knowing its working principles is essential for using it correctly, as the gate-source voltage must be carefully controlled to ensure proper current flow through the device.
The specific data is subject to PDF, and the above content is for reference
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