
Allicdata Part #: | DMN3008SFG-7DITR-ND |
Manufacturer Part#: |
DMN3008SFG-7 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 17.6A POWERDI |
More Detail: | N-Channel 30V 17.6A (Ta) 900mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.20000 |
10 +: | $ 0.19400 |
100 +: | $ 0.19000 |
1000 +: | $ 0.18600 |
10000 +: | $ 0.18000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3690pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN3008SFG-7 is a type of field-effect transistor (FET). Specifically, it is a MOSFET which is an acronym for metal-oxide-semiconductor field-effect transistor. The DMN3008SFG-7 is a single, high-voltage, low-on resistance unit which means it is a suitable component for high-performance switching and amplifier applications.
The DMN3008SFG-7 is typically used in H-bridge DC motor control circuits and can be used for switching high-current DC motors. It can be used for controlling leds. It is suitable for various power amplifier applications such as lighting, audio, and voltage regulation and is an ideal choice for frequency inverters, synchronous buck and boost converters, and power supplies.
The DMN3008SFG-7 has an advantage of offering low Rds(on) without a significant increase in power consumption or heat dissipation and is a preferred active component for applications where power dissipation and temperature are critical. This device ensures high power efficiency, higher switching speed, and improved performance.
The working principle of the DMN3008SFG-7 is the same as that of the other FETs. It consists of two terminals, the source and the drain, and the gate that controls the current flow between the source and the drain. When a voltage is applied to the gate, it attracts the electrons in the gate area and forms an inversion layer. This inversion layer has a higher concentration of electrons which creates an electrostatic field that repels the electrons from the source and the drain and keeps them away from the channel region. This causes the drain-source channel to become smaller, and the resistance increases, thus reducing the current between the source and the drain.
The DMN3008SFG-7 is a very efficient device with excellent performance and stability. It is robust and durable, which makes it reliable for long-term use in various applications. In addition to its reliability, it also offers high switching speeds, improved power efficiency, and low power consumption. It is perfect for applications in the industrial and medical sectors due to its low leakage current and excellent interference immunity.
In conclusion, the DMN3008SFG-7 is an ideal field-effect transistor for applications in the industrial, automotive, and medical sectors. It provides excellent performance, reliability, and low power consumption. Its low Rds(on) offers higher power efficiency and improved switching speed.
The specific data is subject to PDF, and the above content is for reference
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