Allicdata Part #: | DMN33D8LT-7-ND |
Manufacturer Part#: |
DMN33D8LT-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 0.115A |
More Detail: | N-Channel 30V 115mA (Ta) 240mW (Ta) Surface Mount ... |
DataSheet: | DMN33D8LT-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04766 |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 240mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 48pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.55nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 115mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction to DMN33D8LT-7 Application Field and Working Principle
The DMN33D8LT-7 is a dual N-Channel Enhancement Mode MOSFET with a total drain-source breakdown voltage of 33V and a maximum drain current of 80A. It is commonly used as a power switch in a variety of applications such as DC/DC converters, motor drivers, switching regulators, inverters, or power amplifiers.
DMN33D8LT-7 Features and Benefits
The DMN33D8LT-7 offers several benefits including a low on-resistance for improved efficiency, a high voltage rating for increased safety, and an integrated charge pump for improved power management. It also provides an improved form factor compared to other MOSFETs, allowing for a more compact design. In addition, it is rated for an operating temperature range of -55C to 150C, making it suitable for a wide range of applications in extreme temperature conditions. Furthermore, it is RoHS compliant, making it an ideal choice for applications requiring these standards.
Basic Working Principle of the DMN33D8LT-7
The basic working principle of the DMN33D8LT-7 is based on the MOSFET principle of operation. This utilizes three independent pathways to control the flow of electrical current through a channel between two terminals. The first pathway is the body-source terminal, which controls the amount of electrons that can enter the channel. The second pathway is the gate-source terminal, which controls the amount of electrons that can exit the channel. The third pathway is the drain-source terminal, which provides the pathway for current to flow through the channel. By applying a voltage to the gate of the MOSFET, the current through the channel can be controlled. The DMN33D8LT-7 utilizes the current through the channel to switch loads on and off, providing the user with a powerful and efficient switch for a variety of applications.
Applications for the DMN33D8LT-7
Given its combination of features, the DMN33D8LT-7 is a suitable component for a range of applications. Some of these include motor drivers, DC/DC converters, power amplifiers, switching regulators, and inverters. Additionally, this component can also be used in automotive systems, medical devices, industrial equipment, and various other applications.
Conclusion
The DMN33D8LT-7 is an N-Channel Enhancement Mode MOSFET with a wide range of features and benefits. It provides a low on-resistance for improved efficiency, a high voltage rating for increased safety, and an integrated charge pump for improved power management. Additionally, its small form factor, wide operating temperature range, and RoHS compliance make it an ideal choice for a variety of applications. The DMN33D8LT-7 is an excellent choice for applications such as motor drivers, DC/DC converters, power amplifiers, switching regulators, and inverters.
The specific data is subject to PDF, and the above content is for reference
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