DMN3009LFVW-13

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The DMN3009LFVW-13 is a medium voltage, high-speed N-Channel MOSFET with a low gate charge and a low total gate capacitance. This device is designed for applications that require high-speed switching capability in a wide range of gate drive conditions. The device is made with the improved high-voltage silicon technology and can operate with a drain current up to 25A and a drain-source voltage up to30V. DMN3009LFVW-13 is a very strong addition to the portfolio of medium voltage MOSFETs.

The DMN3009LFVW-13 features a low total gate capacitance, which allows it to switch at high frequencies with minimal gate capacitive loading. Additionally, the low gate charge of the device further improves frequency response compared to other MOSFETs. The RDS (on) of the DMN3009LFVW-13 is relatively low compared to other MOSFETs due to its larger silicon area and increased resistance to thermally induced current crowding.

The DMN3009LFVW-13’s channel is formed from an N-type heterogeneously depleted silicon structure. This allows the drain-source channel to be more on-resistant than a homogeneously depleted MOSFET. The L-shaped gate is designed to reduce gate leakage current and to provide a higher switching speed. The device has a high breakdown voltage of 30 V and a low gate threshold voltage of –2.0V.

As the DMN3009LFVW-13 is a MOSFET transistor, its operation is based on the flow of electrons between the source and the drain of the device. In the DMN3009LFVW-13, the substrate of the device is insulated from the gate and drain-source regions. This insulation allows an electric potential to exist between the source and gate. When an electric potential is applied to the gate, it reduces the resistance of the channel and allows current to flow between the source and drain.

The gates of the DMN3009LFVW-13 are protected by an ESD protection diode, which minimizes ESD damage. The device also features an integrated reverse-body diode that reduces ringing during fast switching. Additionally, the DMN3009LFVW-13 offers a low gate resistance, which reduces switching losses, and can handle surge currents up to 75A for short durations.

The DMN3009LFVW-13 has a wide range of applications including driving systems, power circuits, motor control systems, home electronics, and general power switching. Additionally, the device can be used as a low side switch in circuits with inductive loads, for protection against transient voltage spikes, and for short circuit protection.

The DMN3009LFVW-13 is a reliable, high-speed MOSFET transistor which excels in providing efficient switching performance and is suitable for a range of applications. Its low gate charge and low total gate capacitance make it an ideal solution for high-speed switching applications. Furthermore, its ESD protection, reverse-body diode, and low gate resistance ensure reliable operation and reduce losses during switching.

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