DMN3009LFV-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMN3009LFV-13 is one of the most famous field effect transistors (FETs) in the world. It is a N channel enhancement mode FET which is used for a variety of applications such as power management, switching and audio amplification. It is also used for digital and analog signal processing. The way the DMN3009LFV-13 works is based on changing its threshold voltage when a current is passed through it. The transistors can also used for high speed switching, and can switch up to 3GHz.The key features of DMN3009LFV-13 are: low drain-source on-state resistance, fast switching speed, and high frequency operation. The product also features good noise immunity and excellent linearity. A FET is an active three-terminal semiconductor device that controls the flow of electric current. FETs are usually used as switches. In a FET, the drain (D), source (S), and gate (G) are the three terminals. A voltage applied to the gate will allow current to flow through the device, between the drain and source terminals, depending on the type and characteristics of the FET. When no voltage is applied to the gate, no current flows between the source and drain. This makes the FET an ideal choice for low-power applications where the current needed is just going to be for a fraction of a second. Additionally, FETs consume very little power and generate almost no heat when in the OFF state, making them a preferred option for modern electronics. A FET is an example of a three-terminal device and it is a key component in many modern devices such as computers, mobile phones, and gaming systems. They are composed of a substrate, control gate, drain, and source terminal. The channels of the FET are created by the doping of the substrate material, which can be either n-type or p-type, depending on the type of FET. The source terminal is typically connected to the negative supply voltage, while the drain is connected to the positive supply voltage, allowing the FET to act as a switch. The gate terminal is left free and is used to control the FET’s operation by applying the appropriate voltage to it. This voltage is called the “gate voltage” and it is used to control the number of electrons that can be transferred between the source and the drain terminal. Using the gate voltage, a FET can be operated in three different modes - enhancement mode, depletion mode, and linear mode. The DMN3009LFV-13 is an enhancement mode FET, meaning that the gate voltage applied to it must be greater than its threshold voltage, which is set to -8V in this case. When the gate voltage is applied and above the threshold voltage, a net current can flow between the source and the drain and the FET will be turned on. The DMN3009LFV-13 is often used as a switch due to its low source-drain on-state resistance and fast switching speed. This makes it ideal for power management, switching, and audio amplification applications. The device also offers excellent noise immunity, making it a great choice for digital and analog signal processing applications. In summary, the DMN3009LFV-13 is a N channel enhancement mode FET which is used for applications such as power management, switching and audio amplification. It is capable of switching up to 3GHz and has a low drain-source on-state resistance and excellent linearity. The DMN3009LFV-13 is also characterized by its noise immunity and fast switching speed, making it a great choice for a variety of applications.

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