DMN3300U-7 Allicdata Electronics
Allicdata Part #:

DMN3300U-7DITR-ND

Manufacturer Part#:

DMN3300U-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 2A SOT23-3
More Detail: N-Channel 30V 2A (Ta) 700mW (Ta) Surface Mount SOT...
DataSheet: DMN3300U-7 datasheetDMN3300U-7 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 10V
Vgs (Max): ±12V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMN3300U-7 Application Field and Working Principle

The DMN3300U-7 is an advanced dual input, dual output FET (field-effect transistor) transistor that provides exceptional performance and reliability. It is an excellent choice for professional audio, semiconductor, and other electronics applications. It is a two-stage FET transistor with a dielectric layer (usually silicon nitride) between the two stages, making it highly effective in controlling the current. This type of transistor is commonly used in many types of applications, including radio frequency (RF) power transistors, power amplifiers, transmitters, and other high-power applications.

The DMN3300U-7 has a very high switching speed and low thermal resistance, which makes it an ideal choice for high-speed, high-power applications. In addition, the device is very easy to use and can be used for a variety of different applications. The application fields and configuration of the DMN3300U-7 can adapt to a wide range of different applications. This feature makes it one of the most versatile FET transistors available on the market.

Working Principle

The DMN3300U-7 is a two-stage FET transistor. The two stages are divided by a layer of dielectric material, usually silicon nitride. The top stage is called the gate, and the bottom stage is called the source. The two stages are connected via a J-FET or source follower mechanism, which enables the device to control the current flowing through it. When a signal is applied to one of the two inputs, the gate voltage will be higher than the source voltage, allowing the current to flow. This current can be controlled by varying the gate voltage, providing precise control of the current.

The DMN3300U-7 can also be configured as a power transistor by connecting the gate and the source to a voltage source and then provided with a signal. This allows the device to control the power flowing through it, which can be used to drive motors, LEDs, relays, and more. The DMN3300U-7 can also be used as a voltage amplifier, where the current is turned into a voltage, allowing for greater voltage output.

Advantages

The DMN3300U-7 has many advantages over other FETs, including its high switching speed, low thermal resistance, and high reliability. It is a very robust device and can handle high power without degrading or breaking. The device is also extremely low noise, making it ideal for audio applications. In addition, the device is also very versatile, allowing it to be used in a variety of different applications.

The DMN3300U-7 is reliable and long lasting, so it can provide excellent performance over extended periods of time. It is also relatively inexpensive, making it an affordable choice for those looking for a high-quality FET. The device is also very efficient and can provide a lot of power with a minimal amount of energy.

Disadvantages

Despite its many advantages, the DMN3300U-7 does have some drawbacks. The device does not have a great channel length, meaning that it is not suitable for high speed applications. Additionally, the gate voltage can be affected by external factors, making it vulnerable to fluctuations in temperature and other environmental factors.

Overall, the DMN3300U-7 is an excellent choice for professional audio, semiconductor, and other electronics applications. The device is highly reliable and efficient, and can provide excellent performance in a variety of applications. Its versatility, reliability, and low cost make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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