| Allicdata Part #: | DMN3009SK3-13-ND |
| Manufacturer Part#: |
DMN3009SK3-13 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CHANNEL 30V 80A TO252 |
| More Detail: | N-Channel 30V 80A (Tc) 3.4W (Ta) Surface Mount TO-... |
| DataSheet: |  DMN3009SK3-13 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.4W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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TAThe DMN3009SK3-13 is an enhancement-mode Field Effect Transistor (FET) with incredibly wide application fields. This FET has an extremely low gate threshold voltage and an ultra-low specific on-resistance, both of which make it great for power-saving applications that require an extremely low voltage on the gate. It is also suitable for switching applications that require a high current capacity. As such, this FET is a great choice for anyone looking for a reliable yet cost effective source of power.
The DMN3009SK3-13 is a single FET with outstanding characteristics. It utilizes a planar process structure, which is a process used to manufacture transistors. It is capable of working in the 8-ampere range and operates at a voltage of 10V. This device is a popular choice among those looking to maximize their current flow while minimizing their power consumption. Additionally, it can be easily integrated with other components such as capacitors, resistors, and diodes. This allows for a fine tuned, custom power supply.
The working principle of the DMN3009SK3-13 is based on electric field effect, which is a process by which voltage and current can be modulated. This process involves placing a voltage potential on the gate of the FET in order to control the flow of current. This principle is used in many types of applications. In the case of this FET, this principle is used to control the flow of electric current from the drain to the source. When the gate voltage is turned on, current will flow from the drain to the source. When the gate voltage is turned off, current will no longer flow and the FET will be turned off.
The DMN3009SK3-13 is a versatile FET with numerous uses. It is an excellent choice for applications that require a low gate threshold voltage and an ultra-low specific on-resistance. These characteristics make it a great choice for power-saving applications, as well as for switching applications that require high current capacity and a custom-tailored power supply.
The specific data is subject to PDF, and the above content is for reference
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