Allicdata Part #: | DMN30H4D0L-13DITR-ND |
Manufacturer Part#: |
DMN30H4D0L-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 300V .25A SOT23 |
More Detail: | N-Channel 300V 250mA (Ta) 310mW (Ta) Surface Mount... |
DataSheet: | DMN30H4D0L-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 7.6nC @ 10V |
Base Part Number: | DMN30H4 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 310mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 187.3pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN30H4D0L-13 is a high-power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This device is a single-channel N-type MOSFET, featuring internal isolator technology for reduced footprint, lower RDS(on) and effectively double the ZVNLSA. The built-in ESD protection makes the DMN30H4D0L-13 ideal for various applications with high reliability and low loss operation, especially in high power switching, motor control and DC/AC modulating circuitry. This device is also available in surface-mount (SMT) packages with thermal pad.
The application field of the DMN30H4D0L-13 is primarily related to high power switching and motor control, but it can also be used in DC/AC modulating circuitry. The basic function of this device is to serve as a switch in electronic circuits, connecting and disconnecting them from the power source. The DMN30H4D0L-13 is suitable for applications up to 500V, providing excellent thermal management capabilities for efficient heat dissipation.
The working principle of the DMN30H4D0L-13 is based on the flow of electrons between its terminals. The device contains two gates or terminals which control the flow of electrons between the source and drain terminal. When a voltage is applied across the gate of the MOSFET, it modulates the hydrostatic field in the channel between the source and drain. This modulated electric field influences the flow of electrons, allowing electric current to pass through the source and drain. The amount of electric current that can flow through the MOSFET is determined by the gate voltage, making it an effective switch for regulating electrical energy.
The DMN30H4D0L-13 has a high power output and an effective capability to dissipate heat, making it an ideal choice for applications with high currents. The built-in isolation technology reduces the footprint of the device and its RDS(on), while the easily accessible on/off function turns it into a great option for motor control and other low frequency applications. The long lifetime of the DMN30H4D0L-13, accompanied by its fast switching speeds, makes it an ideal choice for reliable and efficient high power switching.
The specific data is subject to PDF, and the above content is for reference
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