Allicdata Part #: | DMN60H080DS-13-ND |
Manufacturer Part#: |
DMN60H080DS-13 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 600V 80MA SOT23 |
More Detail: | N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount S... |
DataSheet: | DMN60H080DS-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 80mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 100 Ohm @ 60mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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DMN60H080DS-13, is a N-channel MOSFETs that belong to the Single common type of Transistors field. With its high variety of applications, DMN60H080DS-13, is especially suitable to switch line with high currents, either AC or DC conditions.
Regarding the characteristics of this MOSFET, its drain current (maximum) is of 60A, with a drain-source voltage of 8,0V.Moreover, its gate charge values are of 59nC (both fast-TR and slow-Qw). This description is optional, since this MOSFET provides the ideal parameter values for high-performance switching.
And talking about technology, DMN60H080DS-13 has a surface-mount technology (SMT) type of package, and provides a power dissipation of 1080W (maximum). Given a maximum junction temperature of 175°C, it is recommended that a Die-class shelf unit should be used to maintain the SOT-223 package and avoid any warm-zone aging problems.
Designing a circuit that uses this MOSFET requires special techniques and precautions, since this module requires a voltage of gate-to-source. The functioning of this device is an example of a simple, but efficient application of power MOSFETs in electronics and communications. With the drain connected to the positive rail of the supply and the source wire connected to the load, the transistor can switch on and off to follow the signal. In result, DMN60H080DS-13 can be used as a solid-state electrical switch, with suitable control signals.
The usage of MOSFETs improves the circuit\'s efficiency due to its high input impedance, small switching time and low OFF-state leakage currents. DMN60H080DS-13 is especially suitable for power mode applications and can be used for switching big currents under AC / DC conditions, like driver circuits, power supplies, microprocessor reset systems and relay controls.
DMN60H080DS-13, usually requires a complex layout to allow PCB assembly and minimize the geometric space occupation. This is an important factor when its applications requires a narrow space, such as telecommunications or automotive systems. Additionally, this device has quite a low V_TH , which allows the use of it in logic circuits. In conclusion, DMN60H080DS-13 is a high performance Single type of MOSFET, recommended to switch line with variable frequencies, high currents and low voltages, due to its outstanding electrical performance, high frequency response and simple array of characteristics.
The specific data is subject to PDF, and the above content is for reference
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