Allicdata Part #: | DMN62D0LFD-7DITR-ND |
Manufacturer Part#: |
DMN62D0LFD-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.31A 3-DFN |
More Detail: | N-Channel 60V 310mA (Ta) 480mW (Ta) Surface Mount ... |
DataSheet: | DMN62D0LFD-7 Datasheet/PDF |
Quantity: | 36000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-UDFN |
Supplier Device Package: | X1-DFN1212-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 480mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 31pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 100mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 310mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.Introduction
The DMN62D0LFD-7 is a dual, depletion mode, N-channel metal oxide semiconductor field effect transistor (MOSFET). It is capable of switching a high current with a low drain-source voltage drop. It is mainly used for analog and low-power digital applications such as switching and power control.
Application Fields
The DMN62D0LFD-7 is designed primarily for linear low-power analog and low-power digital switching applications, as well as for power control and voltage regulation.
Due to its high current-handling capability, the DMN62D0LFD-7 is very useful for switching applications such as battery management systems in portable electronics, lighting control systems, and motor control systems. It can also be used in switching power supplies, solenoids, and lamps.
The DMN62D0LFD-7 is ideal for high current-handling applications, thanks to its low on-resistance and low gate-source capacitance (which reduces switching transient noise). It can also be used for high-speed switching applications and is designed for high temperatures up to 125 degrees Celsius.
Working Principle
The DMN62D0LFD-7 is a depletion mode MOSFET, meaning it is normally on and requires a negative gate-source voltage to turn off. The gate-source voltage must be more negative than the threshold voltage (usually -2.5 V) to turn off the device. There is no need for an additional bias circuit, as the negative gate bias can be applied directly.
When the gate-source voltage is less than the threshold voltage, a positive drain-source voltage can be applied and current will flow through the device. This is known as linear mode operation, and the DMN62D0LFD-7 can handle a drain-source voltage up to 60 volts and a drain-source current of 12 amps.
Once the gate-source voltage is greater than the threshold, the device will turn off and the drain-source voltage must be reduced to less than the threshold voltage for the device to turn back on. This occurs in a very short amount of time and is known as saturation mode operation. In this mode, the device can handle a drain-source current of almost 20 amps.
Conclusion
The DMN62D0LFD-7 is a dual, depletion mode, N-channel MOSFET. It is ideal for high current-handling applications, thanks to its low on-resistance and low gate-source capacitance. It can be used for switching applications such as battery management systems, lighting control systems, motor control systems, and high-speed switching applications. It is also designed for high temperatures up to 125 degrees Celsius. The DMN62D0LFD-7 can handle a drain-source voltage up to 60 volts and a drain-source current of 12-20 amps, depending on the mode of operation.
The specific data is subject to PDF, and the above content is for reference
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