DMN62D1LFB-7B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DMN62D1LFB-7B is an enhanced and improved version of Field Effect Transistor (FET). A FET is a type of semiconductor device that uses an electric field to control the electrical behaviour of a device. The FET is a three lead semiconductor device. It has three terminals, the gate, drain, and source. There are two types of FETs; p-type and n-type.

The DMN62D1LFB-7B is a single n-channel MOSFET. A MOSFET is a type of FET that operates by having a gate voltage vary the conductance between the source and drain. In a MOSFET, there is an oxide layer between the gate and the channel, and changing the voltage of the gate will affect the conductivity of this layer, thus varying the conductance of the FET. This type of FET is useful for building power switches and amplifiers.

The DMN62D1LFB-7B is optimized for power switching applications. It has low gate threshold voltage (Vgs) and low input/output capacitance. It also has low-side switching capability, which allows for the integration of two transistors for high current power switching applications. The DMN62D1LFB-7B has a low on-resistance (Rds) and can operate in low- and high-side configurations. It can handle a large amount of current and can control up to 150 volts.

The working principle of the DMN62D1LFB-7B is based on the electric field generated by the gate voltage. When a voltage is applied to the gate, an electric field is generated, which creates a charge at the source and drain contacts. This electric field alters the conduction between the source and drain contacts and creates a channel of current between the contacts. As the voltage of the gate is increased, the channel increases, allowing for more current to flow through the FET. Conversely, as the voltage of the gate is decreased, the channel decreases and the current is inhibited.

In summary, the DMN62D1LFB-7B is a single n-channel MOSFET that is optimized for power switching applications. It has low gate threshold voltage (Vgs) and low input/output capacitance. It also has low-side switching capability, which allows for the integration of two transistors for high current power switching applications. The FET works by having a gate voltage create an electric field between the source and drain contacts, which alters the conduction of the device and creates a channel of current between the contacts.

The specific data is subject to PDF, and the above content is for reference