DMN62D1LFD-7

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Introduction: DMN62D1LFD-7 is a field-effect transistors (FETs) that comes in a DMN62D1LFD-7 package. It is a single, complimentary symmetrical N-channel enhancement mode MOSFET.

Application field: DMN62D1LFD-7 is suitable for various applications such as battery based switch mode devices, high-side switches and power management.

Power dissipation: DMN62D1LFD-7 has a maximum power dissipation of 20W and can switch high currents up to 15A and operate with a breakdown voltage of 30V.

Architecture: DMN62D1LFD-7 integrated architecture consists of a N-type MOSFET and bias circuitry that provides precise voltage regulation on the gate of the MOSFET and an anti-parallel diode to limit the turn-off stress.

Working principle: DMN62D1LFD-7 MOSFET forms a low-impedance conduction channel. This channel is controlled by the electric field between the gate and source terminal. When the voltage between the gate and source is increased, electrons are attracted to the interface between the gate and the channel region. This increases the density of electrons in the channel and makes the current flow more easily. When the voltage between the gate and source is decreased, electrons are repelled from the interface and the current is reduced.

Features: DMN62D1LFD-7 has a built-in ESD protection for source/drain terminals and a temperature sensing resistor for safety temperature protection. It is available in a 8-pin DMN62D1LFD-7 package and offers excellent thermal resistance characteristics. The integrated bias circuitry and anti-parallel diode can reduce thermal runaway limitations.

Conclusion: DMN62D1LFD-7 is a single, complimentary symmetrical N-channel enhancement mode MOSFET that is suitable for various applications such as battery based switch mode devices, high-side switches and power management. It has a maximum power dissipation of 20W and can switch high currents up to 15A and operate with a breakdown voltage of 30V. DMN62D1LFD-7 integrated architecture consists of a N-type MOSFET and bias circuitry that provides precise voltage regulation on the gate of the MOSFET and an anti-parallel diode to limit the turn-off stress. It is available in a 8-pin DMN62D1LFD-7 package and offers excellent thermal resistance characteristics. The integrated bias circuitry and anti-parallel diode can reduce thermal runaway limitations.

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