DMTH3004LPS-13 Allicdata Electronics
Allicdata Part #:

DMTH3004LPS-13-ND

Manufacturer Part#:

DMTH3004LPS-13

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 30V 22A POWERDI
More Detail: N-Channel 30V 22A (Ta), 145A (Tc) 3.2W (Ta), 136W ...
DataSheet: DMTH3004LPS-13 datasheetDMTH3004LPS-13 Datasheet/PDF
Quantity: 0
2500 +: $ 0.33016
Stock 0Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 43.7nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMTH3004LPS-13 is a type of MOS Field Effect Transistor (MOSFET) with a single enhancement channel, designed and manufactured by Sigma Technology, Inc. It is a power transistor for high power applications such as power switching and control, general purpose amplifier, and DC to DC converter. The DMTH3004LPS-13 has a wide variety of applications and can be used in both switching and linear applications.To understand the working principle behind the DMTH3004LPS-13, it is important to understand how MOSFETs work. MOSFETs are transistors with two areas of conducting paths called source and drain. The gate region lies between the source and drain and is separated by an insulation layer, or insulating gate dielectric. An electrical charge is applied to the gate region, allowing current to flow between the source and drain. As this voltage is increased, the current will increase, thus allowing the MOSFET to act as a switch. Moreover, the resistance across the drain and source terminals changes when a voltage is applied to the gate terminal, meaning that the MOSFET can be used for both switching and amplification applications.The specific features of the DMTH3004LPS-13 result in an excellent power switching performance for a wide range of applications. The operating temperature range is -55°C to 150°C with a breakdown voltage of approximately 30 V, making it ideal for high-temperature, high-power operations.The DMTH3004LPS-13 has an RDS(ON) of 40mOhms, meaning it can handle a high current level of up to 800Amps, making it a suitable choice for use in applications such as DC to DC conversion and high-power motors.The DMTH3004LPS-13 is also capable of providing a high switching frequency and efficiency for high-frequency applications. With a high speed switching performance at 1MHz, the DMTH3004LPS-13 can handle a wide range of switching frequencies to meet the need of high frequency applications. Furthermore, the device offers a low internal capacitance which reduces power losses during switching, resulting in higher efficiency and improved reliability. Moreover, its high frequency performance is further improved by its very low gate charge.In conclusion, the DMTH3004LPS-13 is an excellent power switching MOSFET with superior characteristics such as high temperature operation, high current capacity, high switching frequency and high efficiency. This wide variety of benefits makes the DMTH3004LPS-13 a suitable choice for a range of applications, including power switching and control, general purpose amplifier, and DC to DC converter. The device is also capable of providing precise and accurate output signals due to its low gate charge, making it a reliable choice for precise power management operations.

The specific data is subject to PDF, and the above content is for reference

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