
Allicdata Part #: | DMTH4004SK3-13DITR-ND |
Manufacturer Part#: |
DMTH4004SK3-13 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 31V 40V TO252 |
More Detail: | N-Channel 40V 100A (Tc) 3.9W (Ta), 180W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.54225 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4305pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMTH4004SK3-13 is an n-channel MOSFET designed for enhanced performance in both single and dual applications. It is the latest generation in a series of MOSFETs that use the Schottky technology to achieve high efficiency and low distortion. The DMTH4004SK3-13 MOSFET is optimized for high-speed switching applications, such as in power converters and switch-mode power supplies for the computer industry.
The DMTH4004SK3-13 is a lateral MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to provide an enhancement mode as well as a depletion mode operation, depending on the input voltage. The device can switch frequencies up to 600kHz and can provide an output current up to 800mA at 25℃.
The working principle of the DMTH4004SK3-13 is based on the field effect theory which states that the current through a channel between two electrodes is controlled by the voltage applied to a third (gate) electrode. In an N-channel MOSFET, the current flows through an n-type region of silicon when a positive voltage is applied to the gate. This increases the conductivity between the Drain and Source, allowing current to flow. When the gate voltage is lowered, the current flow is reduced.
The N-channel MOSFET is ideal for high frequency switching applications due to its low input capacitance and on-resistance, as well as its high speed switching capability. It is well-suited for a wide range of power switching applications and has excellent temperature characteristics, which make it a viable option for operating in elevated temperatures. The DMTH4004SK3-13 offers improved RDS(ON) for applications with higher load currents and low RDS(ON) and low gateCharge for applications with higher switching frequencies.
The DMTH4004SK3-13 also has good output energy efficiency and spread spectrum compatibility, making it ideal for mobile and other low-power applications. Its excellent drain-to-source dV/dt Immunity ensures reliable operations in noisy environments, while the low gate charge ensures low switching losses and high efficiency. The DMTH4004SK3-13 is also rated for high temperature operation up to 175⁰C and pulsed current capability up to 4.5A.
The DMTH4004SK3-13 MOSFET is ideally suited for a wide range of power switching applications, such as DC-DC converters, gate drives, motor drives, relays, and amplifiers. It is also suitable for a variety of lighting applications, such as bulbs and lamps, as well as for various consumer electronic products, including PCs, smartphones, tablets, and gaming systems.
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