
Allicdata Part #: | DMTH6010LPS-13DITR-ND |
Manufacturer Part#: |
DMTH6010LPS-13 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 13.5A |
More Detail: | N-Channel 60V 13.5A (Ta), 100A (Tc) 2.6W (Ta), 136... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.33979 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2090pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMTH6010LPS-13 is a low-resistance MOSFET transistor, specially developed by Diodes Incorporated for applications where low insertion loss is required. It features an on-resistance of 13 milliohms, an OFF leakage of 4.5µA, and an off-state gate leakage of 10µA. This model is an ideal choice for various power applications.
MOSFET transistors, or metal-oxide-semiconductor field-effect transistors, are power devices used to control large voltages and currents, often by controlling the ON/OFF state of a power branch. In a MOSFET transistor, a gate voltage is used to switch a large current. The gate voltage, input impedance, and output resistance all determine the ON/OFF state of the device.
DMTH6010LPS-13 uses a depletion-mode MOSFET as its base model, with an on-state resistance of 13 milliohms and an off-state gate leakage of 10µA. Additionally, its body diode has a low forward voltage drop of only 4.5µA.This transistor model is ideal for applications requiring low insertion loss, such as high-side switching, gate driving, and low-side, low-voltage switching. Additionally, it is ideal for electronic switches, automotive HVAC systems, and power supplies.The working principle of DMTH6010LPS-13 is quite simple. When a positive voltage is applied to the gate terminal, the voltage will cause a change in the resistance of the MOSFET. This will cause current to flow through the source to the drain and the device to turn on. If the voltage is removed from the gate terminal, the device will turn off, allowing the current to cease flowing. In essence, the transistor acts as a switch by controlling the current flowing between the source and drain terminals.
DMTH6010LPS-13 presents various advantages compared to other power devices. It is highly efficient, requires low amounts of power to switch, and features extremely low insertion loss. Additionally, it is highly reliable, with many years of use under normal operating conditions.All in all, DMTH6010LPS-13 is a great choice for various applications requiring low insertion loss, such as high-side switching, gate driving, and low-side switching. It is an ideal choice for electronic switches, automotive HVAC systems, and power supplies. Thanks to its low resistance and highly reliable performance, this transistor model is sure to provide efficient and reliable results.
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