Allicdata Part #: | DMTH6010SCTDI-5-ND |
Manufacturer Part#: |
DMTH6010SCT |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 41V 60V,TO220-3,TU |
More Detail: | N-Channel 60V 100A (Tc) 2.8W (Ta), 125W (Tc) Throu... |
DataSheet: | DMTH6010SCT Datasheet/PDF |
Quantity: | 38 |
1 +: | $ 1.14030 |
50 +: | $ 0.91287 |
100 +: | $ 0.79878 |
500 +: | $ 0.61945 |
1000 +: | $ 0.48904 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1940pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36.3nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMTH6010SCT is a single, N-channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) designed for switching and amplification purposes. First of all, let\'s take a look at what MOSFET SCT devices are and how they work. MOSFET SCT devices are special-purpose transistor devices that are optimized to meet very specific requirements. They are usually based on a silicon conductive material and have several types of transistors, each with their own set of characteristics and parameters. The DMTH6010SCT, in particular, is composed of an N-channel MOSFET with a shallow trench gate oxide layer and an integrated device structure designed to provide better switching characteristics.
As an N-channel MOSFET, the DMTH6010SCT will typically be used as a switch, as it allows current to flow in one direction only and is perfect for applications that require a high-switching speed. Additionally, thanks to its integrated design, it also provides amplifier characteristics, allowing it to be used as an amplifier in certain applications. It is typically used in switched mode power supplies (SMPS) and motor controllers. Additionally, its integrated design and low on-state resistance make it a great choice for hot-swapping applications.
The DMTH6010SCT also offers several advantages over traditional MOSFETs. First of all, its shallow trench gate oxide layer improves switching speed and efficiency since it has a much lower gate reflection than a traditional MOSFET. Secondly, its low on-state resistance ensures that it consumes much less power than a traditional MOSFET, allowing it to be used in applications with tight power budgets. Finally, its robust structure makes it highly reliable, making it ideal for applications that require a high degree of system reliability.
The DMTH6010SCT is also easy to use and configure. It can be used in configurations with both single and paralleled transistors, and its parameters can be adjusted using various methods. Additionally, it can be used in multichip modules and systems thanks to its compatibility with other standard components. As such, it is a great choice for applications that require a reliable, high-performance switch or amplifier.
In conclusion, the DMTH6010SCT is a great choice for applications that require a reliable, high-speed switch or amplifier. Thanks to its robust design and low on-state resistance, it is the perfect solution for applications that require a high degree of system reliability. Additionally, its shallow trench gate oxide layer improves switching speed and efficiency, making it ideal for applications that require a high-switching speed. Finally, it is extremely easy to use and configure, making it a great choice for applications that require a reliable, high-performance switch or amplifier.
The specific data is subject to PDF, and the above content is for reference
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