Allicdata Part #: | DMTH4007LK3-13DITR-ND |
Manufacturer Part#: |
DMTH4007LK3-13 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 31V 40V TO252 |
More Detail: | N-Channel 40V 16.8A (Ta), 70A (Tc) 2.6W (Ta) Surfa... |
DataSheet: | DMTH4007LK3-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25843 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1895pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.8A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMTH4007LK3-13 is a n-channel enhancement mode field effect transistor (FET). It belongs to the family of single-mesh transistors, meaning it utilize an individual metal-oxide-semiconductor layer for controlling current flow. Specifically, this model is housed in a 2x2x1.1 minimal package, making it suitable for applications that require small degrees of fit and structure. This transistor features a very high switch speed (ie, a low transition time). Its maximum drain current (ID) is 1.3 Amps, and its maximum drain-source voltage is 20 Volts.
DMTH4007LK3-13 is a great choice for a wide variety of applications where low power consumption, high switch speed and/or cost savings are a priority. It is commonly used as an active driving and switching device in power circuits, as a single-mesh FET is able to handle large amounts of current without generating too much heat. Additionally, this FET’s 70-nanosecond switching time and lowest possible on-resistance make it suitable for high-frequency (HF) applications, such as switch-mode power supplies. Other uses include switching in DC-DC converters, clamping circuits, radio-frequency (RF) amplifiers, preamplifiers and voltage/current regulation.
The working principle of DMTH4007LK3-13 is a simple yet effective way to control electrical current. This type of FET, being an n-channel device, has three terminals: Source, Drain and Gate. Current flow from the Source to the Drain is controlled by adjusting the voltage applied to the Gate. If the voltage at the Gate is below the threshold voltage, the FET is off and no current flows. However, when the Gate voltage exceeds the threshold voltage, current will flow from the Source through the Drain. This is the “enhancement mode” of FET operation, which refers to the device being off until the Gate voltage is increased.
The DMTH4007LK3-13 is a great fit for users seeking a cost-effective, space-saving and high-performance single-mesh FET. This device is able to withstand large amounts of current and provide a fast switching time with minimal added heat. Whether it is used as driving and switching device in power circuit, as the RF amplifier, or in a variety of other applications, the DMTH4007LK3-13 is a reliable and powerful choice.
The specific data is subject to PDF, and the above content is for reference
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