DMTH43M8LPSQ-13

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.7W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3.367nF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	49nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	3.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMTH43M8LPSQ-13 is a single N-Channel MOSFET with an ultra-low Ron value, excellent switching performance, and high-speed switching. It is a small package transistor, which is ideal for applications where current capacity, low voltage drop, and high current handling capability are needed.Application FieldThe DMTH43M8LPSQ-13 is suitable for a variety of consumer electronics and automotive applications. It is most commonly used in consumer electronics such as temperature control, air con, video games, and other consumer products. The DMTH43M8LPSQ-13 also has applications in automotive circuits, and is used for controlling a variety of automotive circuits such as starting motors, air bags and air suspension systems.The use of the DMTH43M8LPSQ-13 in a variety of consumer and automotive applications is due to its low voltage and current requirements, low switching voltage drop, fast switching speed, and low amount of power consumption. The DMTH43M8LPSQ-13 is also suitable for switching DC motors and solenoids, as well as low voltage logic circuits and instrumentation.Working PrincipleThe DMTH43M8LPSQ-13 is an N-Channel MOSFET, which utilizes metal oxide semiconductor (MOS) technology. This type of MOSFET is a four-terminal, three-state device, which consists of a metal oxide semiconductor (MOS) insulated gate, source, and drain.The working principle of the DMTH43M8LPSQ-13 is based upon the movement of electrons through the medium, called an oxide layer which lies between the source and the drain. A voltage applied between the gate and the source causes a conduction path between the source and the drain to be formed, allowing current flow. This conduction path is known as the channel and its size is dependant on the gate voltage.The DMTH43M8LPSQ-13 is designed to be a low voltage to current (VCC/RDS) device, and it is capable of operating at low voltages up to 20V. This low voltage allows it to be used in a variety of applications. The DMTH43M8LPSQ-13 also has an ultra-low Ron value, which allows it to switch quickly and efficiently.ConclusionThe DMTH43M8LPSQ-13 is a single N-Channel MOSFET. It is ideal for a variety of consumer electronics and automotive applications due to its low voltage and current requirements, low switching voltage drop, fast switching speed, and low amount of power consumption. It is capable of operating at low voltages up to 20V, and has an ultra-low Ron value, which allows it to switch quickly and efficiently. The working principle of the DMTH43M8LPSQ-13 is based upon the movement of electrons through the medium, which is the oxide layer between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description