DMTH10H010SPSQ-13 Discrete Semiconductor Products

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DMTH10H010SPSQ-13 is a single enhancement MOSFET(metal–oxide–semiconductor field-effect transistor) manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power management, DC-DC converters and switched-mode power supplies. This device is designed to operate at temperatures up to 175°C and is rated for drain-source voltage up to 600V.

MOSFETs are widely used in electronic devices due to their physical simplicity and excellent switching characteristics. They are good for applications where high-frequency operation and low power dissipation are required. They are also useful in applications where noise and interference must be controlled.

A MOSFET consists of three parts: the source, the gate, and the drain. Source and drain are two electrodes which are connected to the external circuit and the gate is a semiconductor surface that is insulated from the electrode contacts. When a suitable voltage is applied to the gate, a current is created that flows between the source and the drain. This current is known as the drain-source current, or simply the drain current.

DMTH10H010SPSQ-13 is an enhancement MOSFET, meaning that the drain current flows when the gate voltage is higher than the threshold voltage. This is in contrast to depletion type MOSFETs, which require a gate voltage below the threshold voltage for current to flow. This makes the device easier to drive and allows for higher switching speeds. The voltage at which the device starts to turn on is known as the threshold voltage, and can be varied by changing the gate voltage.

The DMTH10H010SPSQ-13 has a maximum drain-source voltage of 600V, making it suitable for high-voltage operation. It is rated for continuous drain current up to 10A, and has a maximum avalanche energy rating of 2mJ. This makes it well-suited for high-power applications, such as motor control or power management.

The DMTH10H010SPSQ-13 is a soft-switching device, meaning that the switching transitions are smooth and controllable. This improves system efficiency by allowing the device to turn on and off quickly without excessive current surges. This makes it suitable for applications with high-speed operation and low noise requirements.

In summary, the DMTH10H010SPSQ-13 is a single enhancement MOSFET which is suitable for applications such as power management, DC-DC converters and switched-mode power supplies. It is designed for temperature up to 175°C and is rated for drain-source voltage up to 600V, making it suitable for high-voltage operation. It has a maximum drain current of 10A, and a maximum avalanche energy rating of 2mJ, making it suitable for high-power applications. Additionally, it is a soft-switching device, meaning that switching transitions are smooth and controllable, making it suitable for applications with high-speed operation and low noise requirements.

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