DMTH4007SK3-13 Allicdata Electronics
Allicdata Part #:

DMTH4007SK3-13DITR-ND

Manufacturer Part#:

DMTH4007SK3-13

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHA 40V 17.6A DPAK
More Detail: N-Channel 40V 17.6A (Ta), 76A (Tc) 3.1W (Ta) Surfa...
DataSheet: DMTH4007SK3-13 datasheetDMTH4007SK3-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.29415
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMTH4007SK3-13 is a type of field effect transistor (FET). It is a MOSFET (metal oxide semiconductor FET) with an array of four integral power MOSFETS and is used in a wide range of short, medium, and long range applications. The DMTH4007SK3-13 works by controlling the flow of electrons through a metal-oxide semiconductor channel. This type of transistor is highly efficient and has a wide variety of applications.

The DMTH4007SK3-13 is optimized for long-term reliability with up to 2 amperes of continuous current through the channel. It is designed to be used in low voltage applications such as DC-DC converters and motor control, where high reliability and low power are required. It is also capable of high frequency switching, with a fast turn off time, making it suitable for high-speed applications.

The DMTH4007SK3-13 also has a wide operating range with a breakdown voltage of 600V. It operates from a supply voltage of 1.8V to 18V, making it ideal for a variety of applications. It is also capable of fast switching, up to a maximum frequency of 40MHz, with a low on-resistance of 0.25 ohm, allowing for high speed switching.

Furthermore, the DMTH4007SK3-13 is constructed with a low-Qg profile, providing improved performance and higher switching speeds. It also has a low output capacitance, allowing for higher frequencies of operation. Additionally, it has a high-temperature variant, which increases its maximum operating temperature, improving reliability in extreme environment applications.

The DMTH4007SK3-13 works by modulating the voltage applied to the gate in order to control the current flowing through the source and drain terminals. When a positive voltage is applied to the gate, the voltage applied to the semiconductor channel of the MOSFET is increased, thus allowing current to flow through the channel. Conversely, when a negative voltage is applied the voltage decreases which then results in the current being cut off. This process is referred to as depletion mode.

In addition, DMTH4007SK3-13 has an integrated power MOSFET protection circuit. This circuit monitors the input voltage, as well as the output voltage, and automatically shuts down in the event of any over-current or over-temperature conditions. This ensures that the device does not get damaged or shut down unexpectedly.

The DMTH4007SK3-13 is suitable for a wide range of applications, from consumer electronics to automotive and industrial applications. It is an excellent device for modern, highly energy efficient equipment. Its high performance, low power consumption, and high reliability make it ideal for a variety of applications. Its wide operating range and integrated protection circuit make it an ideal choice for applications where reliability and safety are essential.

The specific data is subject to PDF, and the above content is for reference

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