ECH8653-TL-H

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ECH8653-TL-H is a type of Field Effect Transistor (FET) array. FETs are used in many modern applications such as power electronics, RF and microwave amplifiers, and control circuits. FETs are particularly useful because of their low power dissipation, high speed switching and low on resistance (R_ON) when compared to traditional BJT transistors. The ECH8653-TL-H is a three-terminal array, and is a combination of three N-channel FETs. As such, this type of transistor is well-suited for common source and common gate applications.

The ECH8653-TL-H is comprised of three N-channel FETs which are connected in parallel. This sub-micron device features an integral source resistor, allowing for a single input stage bias and current range over a wide voltage range. The FETs have a maximum junction temperature rating of 175°C, a drain source breakdown voltage (BVDSS) of 55–100V, and a drain source on-resistance (RDS) of 5–10 mΩ. This particular component is designed to work with 12/13V supplies and is provided in an 8-pin, 3.2 mm × 3.2 mm plastic DFN package, making it ideal for space saving applications.

The ECH8653-TL-H is a type of enhancement mode MOSFET, in which channel enhancement occurs when a positive gate voltage is applied. This voltage reverse-biases the gate-source junction, allowing electrons to flow from source to drain. The good immunity to latch-up gives the component higher reliability in low voltage environments. The component also has a wide range of current handling ability, allowing for higher power applications. Additionally, the component features an over-temperature shutdown as a safety feature to protect the device from potentially damaging operations.

The ECH8653-TL-H is suitable for many applications including power conversion, motor drives, gate drivers and power switches. The package is also robust and features a self-protection design from over-current and over-temperature conditions. With its low on-resistance, high-temperature stability, wide range of current handling, and low power dissipation, the ECH8653-TL-H is an ideal choice for many applications where a combination of these characteristics is desired.

The specific data is subject to PDF, and the above content is for reference