ECH8315-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | ECH8315-TL-HOSTR-ND |
Manufacturer Part#: |
ECH8315-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 7.5A ECH8 |
More Detail: | P-Channel 30V 7.5A (Ta) 1.5W (Ta) Surface Mount 8-... |
DataSheet: | ECH8315-TL-H Datasheet/PDF |
Quantity: | 1000 |
Specifications
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-ECH |
Package / Case: | 8-SMD, Flat Lead |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 875pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | 150°C (TJ) |
Description
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The ECH8315-TL-H is a type of transistor, specifically a type of FET (Field Effect Transistor) known as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). They are commonly used in the semiconductor manufacturing process to make the devices that form the building blocks for many of our electrical systems, devices, and networks. This type of device is particularly useful due to its superior performance and low power requirements.A MOSFET is a three-terminal device, which consists of a gate, a source, and a drain. Its main purpose is to control the electrical current flowing from the source to the drain. A MOSFET is made up of a thin layer of semiconductor material, typically silicon, sandwiched between two layers of conducting material, usually aluminum and copper. It is the use of these materials that gives the FET its distinctive properties. The structure of the ECH8315-TL-H MOSFET is made up of a channel region of n-type material, which is sandwiched between two gate terminals, one gate on either side of the channel. The source and the drain are also connected. When a voltage is applied to the gate, it modifies the charge within the channel, causing electrons to be attracted or repelled, depending on the polarity of the voltage. This changes the channel\'s resistance, and as a result, the current flowing through the MOSFET is altered.The ECH8315-TL-H has a wide range of applications, from acting as a switch to controlling the level of current passing through a circuit. In the automotive industry, for example, it can be used to control the airbags and window motors, as well as providing a reliable, efficient control for engine fuel systems. The ECH8315-TL-H also has applications in power supplies, amplifiers, and digital circuits, particularly computers and other devices that require high levels of current and efficiency.The ECH8315-TL-H is a versatile FET and can be used in a variety of ways. It is capable of handling high voltages, high currents, and a wide range of temperatures. It is also relatively inexpensive and therefore ideal for applications where cost is a factor. Additionally, its excellent electrical properties make it well-suited for use in audio and video applications. In conclusion, the ECH8315-TL-H is a highly versatile MOSFET device, with a vast range of applications. It is suitable for a variety of uses due to its low power consumption and excellent electrical performance. Thanks to its robust construction, the ECH8315-TL-H is capable of handling both high temperatures and a wide range of currents. It is ideal for use in both industrial and consumer-level applications and is one of the most popular and reliable transistor devices currently on the market.
The specific data is subject to PDF, and the above content is for reference
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