ECH8659-TL-H

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The ECH8659-TL-H is an array of N-channel enhancement mode MOSFETs that is designed to work in a range of circuits. For the application of the MOSFETs, the prime requisites for their working should be considered.

In an N-channel enhancement mode MOSFET, the conductivity of the channel is controlled by the gate-source voltage. When the applied gate-source voltage is positive with respect to the source, the semi-conductor channel is enhanced by inversion and electron flow from the source to drain is caused. Thus,when the applied gate-source voltage is negative with respect to the source, the electron flow is inhibited, and the channel has effectively turned off.

In specialized versions of MOSFETs, the enhancement mode of conduction provides the highest back-gate conductance and off-state leakage. The magnitude of the required gate voltage to achieve a maximum specified drain current is determined by the channel length-to-width ratio of the device.

The ECH8659-TL-H is an 8-bit x 8-bit array of N-channel enhancement mode power MOSFETs fabricated with a high performance process. It contains a total of 64 transistors and is available in a variety of packages for integration into different systems and applications.

The main applications of the ECH8659-TL-H array are in DC-DC converters, LED drivers, pulse width modulation controllers, and high current and low voltage power supply applications. It has a maximum operating frequency of 500 kHz, and a maximum drain-source on-state resistance of 0.35 ohms.

In addition, this device is capable of supporting a wide range of supply voltages; from as low as 7 V up to 24 V. This feature makes it suitable for applications that require a wide range of supply voltage ratings. The ECH8659-TL-H also offers high current and low threshold voltage capability, and a wide range of input and output capacitances.

The device also has an enhanced protection feature which combines electrostatic protection and ESD clamp diodes on-chip, to protect the device from high voltage transients and ESD events. It is also highly reliable, and has an excellent temperature range which is suitable for a wide range of applications.

In conclusion, the ECH8659-TL-H is a highly versatile and reliable array of N-channel enhancement mode MOSFETs. The device has a wide range of applications and offers excellent performance at a variety of supply voltages. It is suitable for use in high current and low voltage power supply applications, DC-DC converters, LED drivers, and PWM controllers. Additionally, its protection features, temperature range, and high current and low threshold voltage capability give the device an edge over its counterparts.

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