Allicdata Part #: | ECH8320-TL-H-ND |
Manufacturer Part#: |
ECH8320-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 9.5A ECH8 |
More Detail: | P-Channel 20V 9.5A (Ta) 1.6W (Ta) Surface Mount 8-... |
DataSheet: | ECH8320-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-ECH |
Package / Case: | 8-SMD, Flat Lead |
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The ECH8320-TL-H is a semiconductor device, classified as a single MOSFET or metal oxide semiconductor field-effect transistor (MOSFET). It is typically used as a switching element in applications requiring large current or voltage handling capabilities. Its performance characteristics provide an ideal solution for a variety of power control and switching needs.
The ECH8320-TL-H is a N-Channel metal oxide | semiconductor field-effect transistor with built-in current limiting and protection against over voltage. It has a low on-state resistance (Ron) compared to the P-Channel device, making it an ideal choice for high current switching. The device also features an adjustable threshold voltage (Vth) which allows the user to set a desired operating region without having to rely solely on the factory-set threshold voltage. This feature can also be used to optimize the device performance for different operating conditions.
The basic principle of operation for the ECH8320-TL-H is that of a source-follower. In this design, the source (drain connected to ground) and the gate form a voltage-controlled resistor in the form of the channel. As the gate voltage (Vgs) is increased, the channel resistance decreases accordingly. This leads to a corresponding change in drain current (Id) which is proportional to the gate voltage (Vgs). Thus, the device can be used for various purposes including switching, voltage control or current control.
The main application area for the ECH8320-TL-H is the power control and switching requirements of industrial and commercial settings. Due to its low Ron, the device can be used in current limiting and protection applications in these environments. It is also suitable for use in high power switching applications, due to its high dielectric breakdown voltage. The adjustable threshold voltage feature makes it ideal for applications requiring fine-tuning of the power control characteristics.
In summary, the ECH8320-TL-H is a single MOSFET device that is widely used in power control and switching applications. Its low on-state resistance and adjustable threshold voltage features make it suitable for a variety of current or voltage requirements. The device is ideal for both industrial and commercial settings and can be used for high power switching, current limiting and protection applications. Its basic principle of operation is that of a source-follower, in which the drain current is proportional to the gate voltage. Furthermore, its adjustable threshold voltage offers additional flexibility for customizing power control needs.
The specific data is subject to PDF, and the above content is for reference
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