ECH8651R-R-TL-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	--
FET Feature:	--
Drain to Source Voltage (Vdss):	--
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	8-ECH

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The ECH8651R-R-TL-H application field and working principle is an important topic that has been widely studied and researched.The ECH8651R-R-TL-H is a part of the R-R-TL-H series of Arrays, which are High Voltage MOSFETs designed for various applications such as Motor Control, DC-DC and AC-DC Converters. The device has two levels of technology, each level providing its own specific features. The ECH8651R-R-TL-H is a Low Specific On-Resistance MOSFET Array, featuring an advanced cell design, which provides a high specific current capability. The R-R-TL-H series has an optimized structure for improved performance and reliability, making it ideal for high temperature and high power applications.The ECH8651R-R-TL-H MOSFET Array is designed to work with integrated circuits and discrete components in the automotive, industrial, consumer and computing markets. Its low on-resistance provides excellent performance and high current capability, making it suitable for a wide range of applications including switched mode power supplies, motor control and variable speed drives. The device also has a low voltage threshold, which can help to reduce power consumption, and its integrated protection circuit prevents it from being damaged by overvoltage, overcurrent and temperature fluctuations.The working principle of the ECH8651R-R-TL-H MOSFET Array is based on the principles of MOS technology. This device is composed of four independent MOSFET cells, each cell comprising a p+ gate, a n-channel junction, and an N+ drain. The gate is the control element of the MOSFET, which allows the charge carriers or current to pass or be blocked. When a voltage is applied to the gate, it will allow the current to flow freely. The n-channel junction connects the gate to the drain, and is responsible for controlling the device\'s performance. The N+ drain is designed to ensure that the device can handle large amounts of current, and to provide a path for the current to flow when the gate is opened.In conclusion, the ECH8651R-R-TL-H application field and working principle is an important topic for research and development. Its advanced cell design, low specific on-resistance, integrated protection circuit, and its ability to perform in a wide range of applications make it an ideal choice for a variety of applications. Therefore, this device should be considered when looking for a high-performance and reliable MOSFET Array.

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