ECH8675-TL-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4.5A
Rds On (Max) @ Id, Vgs:	46 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 10V
Power - Max:	1.5W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	8-ECH

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ECH8675-TL-H Application Field and Working Principle

The ECH8675-TL-H is an advanced enhancement-mode field effect transistor (FET) array especially designed for use within the most demanding of automotive applications. It is a versatile and reliable FET array for improving the efficiency, accuracy and performance of both older and newer vehicle systems.The individual components of the ECH8675-TL-H chip package have been designed to meet the rigorous demands of the automotive industry, and works by combining individual FETs into one array. This array makes it possible for the chip to offer several features not available from single transistors, including advanced protection features, low-noise operation, thermal stability and improved pin-out arrangements. The combination of FETs also provides a compact design that is well-suited for board level integration.The specific application fields of the ECH8675-TL-H include: car powertrain systems, power steering control modules; advanced frequency converters; automotive brake systems; traction control modules; engine management systems; and start-stop systems. The most common package used is the QFN48, which is a pad-down array package, with dimensions of 5.3 x 9.3 mm, and a maximum height of 1.45 mm.The working principle of the ECH8675-TL-H is straightforward. Each of the individual FETs is operated as an independent channel, and its own channel is operated by applying an independent gate voltage. This gate voltage controls the width of the channel, and thus the conductance of the FET. This feature allows designers to precisely control the switching frequencies, the threshold voltage, and the input power levels of the array, providing high performance and precise control.In terms of features and benefits, the ECH8675-TL-H FET array provides very low on-state resistance, which results in efficient power management. The architecture of this FET array also provides high-frequency performance, significantly reduced EMI/EMC related errors and excellent ESD protection.On the whole, the ECH8675-TL-H is an advancement over single FETs and is used in automotive applications that require reliable, stable and efficient operations; precise control of input power levels, switching frequencies and threshold voltages; and reduced EMI/EMC related errors.

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