ECH8653-S-TL-H

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are the key components of electronic circuits, and there are many types of transistors used in different applications. One of the most popular types of transistors is the ECH8653-S-TL-H, which is an array of field-effect transistors (FETs). It is commonly used in analog and digital applications, and it is suitable for power application and for low voltage switching applications.

The ECH8653-S-TL-H is a four-channel FET array. It consists of four N-channel enhancement-mode FETs, each one with its own drain, gate and source pins. The FETs are connected in parallel and can be used in low voltage switching applications. The channels are individually shielded and the FETs are constructed using lightly-doped N-channel MOSFETs. The device is rated for drain-to-source voltages up to 20 V and the nominal on-resistance is 5.6 mΩ.

The main advantage of an FET array is that it allows for the creation of complex analog and digital circuitry with a single chip. This makes it an ideal solution for many applications, such as power management, motor drives, power converters and automotive applications.

The working principle of the ECH8653-S-TL-H is based on the principle of field effect. When a voltage is applied to the gate of the FET, it creates an electric field, which is then used to control the current flow between the drain and the source. The Gate-Source-Voltage controls the amount of current flowing through the FET and it also controls the on-resistance and the current driving capability.

The ECH8653-S-TL-H is commonly used in a wide range of applications. It can be used for power management, motor drives, and power converters, as well as for signal switching, signal conditioning and signal isolation. In addition, it can be used for noise reduction and signal amplification.

In summary, the ECH8653-S-TL-H is an FET array that is used in many different applications. It has a nominal on-resistance of 5.6 mΩ, which makes it suitable for low voltage switching applications. The FETs are connected in parallel and are constructed using lightly-doped N-channel MOSFETs, allowing for complex analog and digital circuitry on a single chip. Furthermore, the Gate-Source-Voltage controls the amount of current flowing through the FET and its current driving ability, making it an ideal candidate for power management, motor drives, power converters and automotive applications.

The specific data is subject to PDF, and the above content is for reference