ECH8601M-C-TL-H Allicdata Electronics
Allicdata Part #:

ECH8601M-C-TL-H-ND

Manufacturer Part#:

ECH8601M-C-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 24V 8A ECH8
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 24V 8...
DataSheet: ECH8601M-C-TL-H datasheetECH8601M-C-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Description

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The ECH8601M-C-TL-H is a versatile transistor array designed for a variety of applications. It is a type of field effect transistor or FET. FETs have a number of advantages. They draw very little current, have a low noise performance, and can be used with a wide range of operating voltages. The ECH8601M-C-TL-H is a specific type of FET array known as an MOSFET.

MOSFET transistors have a number of advantages over other types of transistors. They require only a small gate current to operate, have a higher switching speed, and lack the necessity for pulse transformers in their power supplies. The ECH8601M-C-TL-H is a high-performance, high-speed MOSFET array designed for a variety of applications.

The ECH8601M-C-TL-H is designed to be used in power circuit design such as motor control and power amplifier design. The ECH8601M-C-TL-H can also be used for RF amplifiers, switching applications, and for data communications circuits. The ECH8601M-C-TL-H provides superior performance over other arrays due to its high speed MOS transistor array architecture.

The ECH8601M-C-TL-H functions by having current carriers travel through a channel between two metal contacts called the source and drain. The gate, another metal contact, typically controls the current by creating a potential difference with the channel. By changing the voltage applied to the gate, current can either be passed through the channel or blocked. This makes the ECH8601M-C-TL-H a very versatile device which can be used in a wide range of circuit designs.

The ECH8601M-C-TL-H can operate over a wide range of temperatures and operating conditions, making it suitable for a range of commercial and industrial applications. It is designed to be low noise, making it suitable for high performance applications such as motor control and power amplification.

The ECH8601M-C-TL-H is a versatile transistor array. It is a type of MOSFET array which is well suited for many applications. It can be used in power circuitry, RF amplifiers, switching applications, and data engines. The ECH8601M-C-TL-H is designed to be low noise and has a wide range of operating temperatures and conditions. This makes it a useful device in many commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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