ECH8695R-TL-W Discrete Semiconductor Products

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The ECH8695R-TL-W is an array of N-Channel enhancement-mode Field Effect Transistors (FETs). It is commonly used in power management circuits, such as DC-DC converters, smart power supply controllers, and high voltage gate drivers, as well as in output interface circuits for various electronic applications. The device is especially suited for use in automotive, medical, and telecom applications where high performance, high reliability, and low on-resistance are critical.

The ECH8695R-TL-W is a RoHS Compliant, Enhanced-Mode N-Channel MOSFET array. Each transistor is constructed using the Enhanced-Mode FET process that combines Directly Activated and Enhanced-Mode technologies to provide excellent Rds(on) and high reliability. The combination of these technologies results in a part that provides high gate-to-drain capacitance, low on-resistance, and excellent thermal and electrical stability.

The functioning of the ECH8695R-TL-W is based on a two-terminal voltage source, the drain and the source, which are respectively connected to the drain and source of the power MOSFETs. When a voltage is applied between the gate and source of the FET, an electric field is created between the gate and the channel, which causes a bandgap semiconductor to be formed between these two regions. This bandgap is responsible for controlling the current flowing between the drain and the source. The ECH8695R-TL-W utilizes this principle for its operation.

The ECH8695R-TL-W is offered in an eight pin SOIC (Small Outline IC) package and is ideal for applications that require high performance, high reliability, and low on-resistance. The device supports high current switching with low Rds(on), excellent thermal stability, and ESD performance up to 4kV HBM. The array is rated for maximum power dissipation of 2W and a maximum junction temperature of +150°C. In addition, the device meets all applicable automotive industry qualification criteria.

The ECH8695R-TL-W is a great choice for high performance and reliable FET array applications. It provides the user with high on-resistance, low gate-to-drain capacitance, and excellent thermal and electrical stability. In addition, the device is RoHS Compliant, meeting the strictest industry standards, and is suitable for automotive, medical, and telecom applications.

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