EPC2012C Discrete Semiconductor Products |
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Allicdata Part #: | 917-1084-2-ND |
Manufacturer Part#: |
EPC2012C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 200V 5A BUMPED DIE |
More Detail: | N-Channel 200V 5A (Ta) Surface Mount Die Outline ... |
DataSheet: | EPC2012C Datasheet/PDF |
Quantity: | 10000 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 3A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die Outline (4-Solder Bar) |
Package / Case: | Die |
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The EPC2012C is a Field Effect Transistor (FET) for power control applications. It is a single n-channel MOSFET aimed at the automotive, consumer and industrial markets. It has the potential to replace several traditional power devices.
The EPC2012C is suitable for a variety of applications ranging from motor control, lighting and power conversion to battery management and consumer electronics. With its low on-resistance and fast switching speed, it delivers high efficiency and enhanced reliability. Additionally, its ultra-small form factor and an integrated circuit guarantees an increased power density. This makes it ideal for space-constrained applications.
The EPC2012C has been designed with a strong focus on ease of use and enhanced reliability. Its operation is based on the principle of the open-loop voltage amplifier which is the main device in a power supply control circuit. The device consists of a series of transistors connected in a “gate” configuration. The voltage applied to the input “gate” controls the current passing through the output “gate”. This current is then passed to the output circuit, where it is used to control the power flow.
The EPC2012C has a number of features that make it suitable for many power control applications. For example, its high current handling capability and low on-resistance enable it to deliver high efficiency, while its fast switching speed ensures enhanced reliability and increased power density. Additionally, its control circuit is programmed to allow for the precise control of output power over a range of voltages. This makes it ideal for use in a wide range of applications.
In addition, the EPC2012C is designed to be highly integrated with its compatible devices. If a device is connected to the EPC2012C, it will be automatically configured to the same parameters, allowing for an automatic seamless integration of multiple devices. This ensures efficient and reliable operation across the board.
The EPC2012C is an ideal choice for any application that requires the efficient control of power. With its low on-resistance and fast switching speed, it is able to deliver high efficiency and reliability. Additionally, its integrated circuit offers increased power density, allowing for smaller installations in space-constrained applications. Finally, its high integration capability makes it the perfect choice for applications that require the efficient control of multiple devices.
The specific data is subject to PDF, and the above content is for reference
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