EPC2001C Discrete Semiconductor Products

The EPC2001C is a single P-channel enhanced performance power MOSFET (metal oxide semiconductor field-effect transistor) designed to offer high power handling capability in limited packages, while maintaining low on-resistance. As a single P-channel device, it is appropriate for applications requiring low on-state resistance, high peak current capability, and low gate-source threshold voltage. As a metal oxide semiconductor field-effect transistor, it is used to control currents by making the resistance between source and drain results depend on the amount of electrical charge at the gate.

The EPC2001C is designed to operate over a wide temperature range (-55C to +175C). It is ideally suited for use in a variety of power management applications including power supply design, DC-DC converter control, and high-side switching. This device is also widely used in power on/off circuit designs, and power sequencing applications. It has a 150°C maximum junction temperature rating, allowing it to handle higher temperature applications than traditional MOSFETs.

The EPC2001C utilizes a P-channel enhancement type process allowing for high breakdown voltage and high output power. The device’s 25V drain-source breakdown voltage rating makes it ideal for high voltage applications. In addition, the EPC2001C has a maximum continuous drain current rating of 180A and a maximum peak current rating of 360A. This makes it suitable for use in applications requiring high currents, such as motor control.

The EPC2001C also offers a low gate-source threshold voltage, making it suitable for use in low power designs. Its gate-source threshold voltage rating is -2.0V and its drain-source threshold voltage rating is -1.0V. This low gate-source threshold voltage enables the device to operate at very low operating voltages, thus making it suitable for use in portable and battery-powered devices.

The EPC2001C utilizes an EPC 2001CM7 process and is packaged in a leadless SO-8 package. The device has a low gate capacitance rating of 8pF and a low input capacitance rating of 2pF, making it highly efficient for switching noise management and minimizing power dissipation. It also has an integrated leadframe ensuring consistent thermal efficiency.

The EPC2001C is an ideal choice for those designing circuits requiring high power handling capability and high current capabilities in limited spaces and packages. Due to its wide temperature range and enhanced features, this device is well-suited for a variety of power management applications, including power supply designs, DC-DC converter control, and high-side switching. In addition, its low gate-source threshold voltage and integrated leadframe provide improved device performance and efficiency.