FDC6036P_F077 Allicdata Electronics
Allicdata Part #:

FDC6036P_F077-ND

Manufacturer Part#:

FDC6036P_F077

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 5A 6SSOT
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 5A 900mW Surfa...
DataSheet: FDC6036P_F077 datasheetFDC6036P_F077 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package: SuperSOT™-6
Description

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The FDC6036P_F077 is a type of field-effect transistor (FET) array. It is a high-performance device designed to function as transistors in both digital and analog circuitry applications. This FET array is made up of two complementary N-channel enhancement-mode transistors with an internal drain connection.

The FDC6036P_F077 FET array is available in a variety of voltage and power ratings. It is suitable for use in systems that require high performance and low power, such as industrial, automotive, and communications applications. This device is easy to use and can be used for both analog and digital applications.

The FDC6036P_F077 has a maximum drain-to-source breakdown voltage of 11V. This allows it to be used in high-voltage applications or systems with a high voltage rating. The operating temperature range of this FET array is -55 to 150 degrees celsius, so it can be used in a wide range of ambient temperature environments.

In addition, the FDC6036P_F077 has a minimum current rating of 40mA. This allows it to be used in low current applications such as logic gates and amplifiers with high input impedance. It also offers a minimum input capacitance of 1.6pF and a maximum input capacitance of 140pF. This wide range of input capacitance enables the FET array to be used in a variety of circuits.

The working principle of the FDC6036P_F077 FET array is based on the principle of field effect. This principle states that the behavior of an electric field is determined by its electric potential. When an electric field is applied, electrons in the channel of the FET are attracted towards the gate electrode. This creates an electric potential in the channel and the potential difference between the gate and the source determines the flow of current through the channel.

In the FDC6036P_F077 FET array, the gate is connected to the drain while the drain and source are connected internally. This connection allows the gate to control the flow of current through the FET array. The device is also able to switch between two states, on and off, for analog and digital applications.

The FDC6036P_F077 is a versatile device with a wide range of applications. It can be used for digital circuitry applications such as logic gates and amplifiers, or for analog circuitry applications such as voltage-controlled circuits. This FET array is a reliable device with excellent performance and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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