Allicdata Part #: | FDC645NTR-ND |
Manufacturer Part#: |
FDC645N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 5.5A SSOT-6 |
More Detail: | N-Channel 30V 5.5A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC645N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 6.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC645N is a general-purpose N-channel. MOSFET transistor of the discrete devices section. This type of transistor is also known as a field-effect transistor, or FET. It belongs to the same family of transistors as the Bipolar Junction Transistor (BJT) and the Junction Field-Effect Transistor (JFET). FETs are commonly used in electronic devices such as amplifiers, logic gates, digital circuits, and oscillators. FDC645N is a single N-channel MOSFET in a small TO-92 package that is suitable for a variety of applications.
FDC645N has a Drain-Source current rating of 500mA and a voltage rating of VD(BR)DSS at 20V. The electrical characteristics of this device are further specified by the RDS on-state resistance and a gate threshold voltage. At elevated temperatures, some variations in FDC645N electrical characteristics may occur, such as an increase in junction temperature and a reduction in drain current. However, these variations should not have a significant impact on the operation of the device for most applications.
The FDC645N MOSFET transistor is used in applications requiring controlled flow of current between the source and drain. This type of transistor uses electrical fields to control current flow rather than the traditional junctions of PN-type BJT transistors. The FDC645N consists of two terminals, a gate and a drain/source. The gate terminal is used to control current flow between the drain and source terminals. When the gate voltage is below the threshold voltage, current flows freely between the drain and source terminals. This state is known as "on." When the gate voltage is greater than the threshold voltage, current flow is inhibited and the device is said to be in the "off" state.
The FDC645N has a range of applications, most of which involve controlling current flow. It is commonly used to regulate the flow of current in audio amplifiers, motor controllers, and switching power supplies. In addition, low-power applications such as low-voltage DC power supplies and dimmer switches are also suitable applications for this type of transistor. FDC645N is also an ideal solution for noise filtering, as it can be used to eliminate unwanted frequency components. Due to its low power requirements, FDC645N is also a great choice for battery-powered applications.
In summary, the FDC645N MOSFET transistor is a single N-channel MOSFET of the discrete devices section that is suitable for a wide range of current controlling applications. Its features include a low-power drain-source current rating, gate threshold voltage, RDS on-state resistance, and temperature-related variations. The applications most commonly associated with FDC645N transistors are audio amplifiers, motor controllers, switching power supplies, low-voltage DC power supplies, dimmer switches, and noise filtering. It is also a great choice for battery-powered applications due to its low power requirements.
The specific data is subject to PDF, and the above content is for reference
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