Allicdata Part #: | FDC640PTR-ND |
Manufacturer Part#: |
FDC640P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4.5A SSOT-6 |
More Detail: | P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC640P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 4.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC640P is a form of metal oxide semiconductor field-effect transistors (MOSFET). It has an ultra-low input capacitance, making it suitable for many digital and switch-mode applications. This article will discuss the various application fields and working principle of the FDC640P.
Application Field
The FDC640P is commonly used in applications such as voltage-controlled oscillators (VCOs), digital logic gates, power switching circuits, and in many other electronic components that require an ultra-low capacitance MOSFET. It is also used to protect sensitive devices, such as wire and cable ends, from overvoltage or transient events.
The FDC640P is also used in ultra-low power or low-power standby applications. Since it has an ultra-low input capacitance, it is often used to form power switch networks that spread the active loads over multiple transistors to reduce the total power drawn. This characteristic makes it suitable for use in portable electronics, such as cell phones, and other battery-operated devices.
Furthermore, due to its high switching speed and low input impedance, FDC640P is a good choice for high speed, high frequency communications, such as Ethernet and Wi-Fi, as well as in automotive applications, where multiple power switches are necessary, such as in sensors and engine control units.
Working Principle
FDC640P transistors use the same method of operation as other MOSFETs. When a positive voltage is applied to the gate of the FDC640P, the channel between the source and drain gets ”pinched” off and the transistor is turned off. As the voltage is dropped, the channel opens, allowing current to flow.
The FDC640P transistors are constructed with a P-channel whereby when a positive voltage is applied to the gate, the positive charge attracts the electrons from the substrate into the channel and the device will be turned off. When the voltage is reduced, the electrons return to the substrate and the device is turned on.
The unique characteristic of the FDC640P is its ultra-low input capacitance, which results in an ultra-low gate charge. This gate charge is what is responsible for the ultra-low power consumption of the FDC640P transistors, together with their low on-state resistance, allowing them to switch quickly and efficiently.
In addition, the FDC640P transistors offer lower cost due to the fact that they are compatible with many common circuit boards, including P and N-channel, enabling users to build complex switch-mode applications through the use of fewer components. Furthermore, the output signal is cleaner and less susceptible to noise.
To summarize, FDC640P is an ultra-low input capacitance MOSFET commonly used in many digital and switch-mode applications, such as voltage-controlled oscillators (VCOs), digital logic gates, and power switching circuits. It has an ultra-low gate charge, enabling fast and efficient switching, as well as a lower cost solution thanks to its compatibility with P and N-channel circuit boards.
The specific data is subject to PDF, and the above content is for reference
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