Allicdata Part #: | FDC608PZTR-ND |
Manufacturer Part#: |
FDC608PZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 5.8A SSOT-6 |
More Detail: | P-Channel 20V 5.8A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC608PZ Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1330pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FD608PZ is a type of Field-Effect Transistor (FET) specifically designed as a vertical DMOSFET, which stands for depletion-mode metal oxide semiconductor Field-Effect Transistor. This type of transistor is used in a variety of applications, including power conversion, amplifier circuit, switching, and analog circuits in consumer electronics. It has a wide range of application fields and is used for a variety of purposes.
The FDC608PZ, being a vertical DMOSFET, can be subdivided into two categories – N-channel and P-channel devices. They are further divided into various types to provide an optimized solution for respective applications. A variety of parameters, such as gate-source voltage, drain-source voltage, collector (gate-source) current, and output power determines their performance. This makes them very precise in their operation and distinct from their peers.
FD608PZ utilizes a metal-oxide semiconductor (MOS) and field-effect technology, which consists of several components including source, drain, and gate. When the FET operates, the gate of the transistor acts as a shield between the externally applied input voltage and the internal part of the transistor. This in turn obstructs the flow of current, thus regulating current and voltage.
The FD608PZ also has an inherently low input capacitance, allowing for faster switching times and improved circuit response. This is primarily due to the fact that the electrons need little time to repopulate the holes, allowing for a quicker response time. Altogether, the FDC608PZ results in an overall low power consumption.
The FD608PZ also has a relatively high input impedance. This allows it to respond as quickly as possible to any changes in its operational environment, making it ideal for use in power electronic circuits.It also means that it is capable of operating at higher voltages, making it suitable for a wider range of applications.
The FD608PZ also features an integrated transient immunity, which helps protect its circuitry by dispersing any potential excess current away from its sensitive components. This helps to ensure the longevity of the FET and prevent any potential damage due to current overloads.
The FD608PZ is also very robust and reliable, making it well suited to a variety of industrial and commercial applications. It is also widely adopted in high-power applications, as it is capable of handling temperatures up to 125 degrees Celsius, making it appropriate for harsh conditions. The FDC608PZ is also very easy to use and configure, allowing for quick installation and setup.
In summary, the FDC608PZ is a type of Field-Effect Transistor (FET) specifically designed as a vertical DMOSFET, which stands for depletion-mode metal oxide semiconductor Field-Effect Transistor. It is an ideal choice for a variety of power conversion, amplifier, switching, and analog circuits in consumer electronics, as it has an inherently low input capacitance and a high input impedance. Additionally, the FDC608PZ is very robust and reliable and features an integrated transient immunity to help protect its circuitry.
The specific data is subject to PDF, and the above content is for reference
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