FDC636P Discrete Semiconductor Products |
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| Allicdata Part #: | FDC636PTR-ND |
| Manufacturer Part#: |
FDC636P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 2.8A SSOT-6 |
| More Detail: | P-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount Su... |
| DataSheet: |  FDC636P Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | SuperSOT™-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.6W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 2.8A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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FDC636P is a type of transistor, specifically a Field Effect Transistor (FET). It is a metal-oxide-semiconductor field-effect transistor (MOSFET) device with a single element desgined to control the flow of electricity from a source to a load. The transistor is commonly used in a variety of electronic components.The FDC636P is designed for use in power electronic circuits and has a wide variety of application fields. It is commonly used for switching and amplification in a wide range of applications. These include battery charge controllers, DC/DC converters, high-speed switching circuits, and motor control applications. It is used to control the speed of motors in numerous applications. Additionally, FDC636P is compatible with both leaded and surface-mount technologies, making it suitable for a variety of applications.The working principle of the FDC636P is based on a process known as the Channel Allocation principle. This definition states that when a gate voltage is applied to the device it creates a conductive channel between the source and the drain terminals of the transistor or between the source and gate terminals. This channel enables current to flow through the device in either direction, depending on the voltage applied to the gate. This process helps control the direction and magnitude of the current, allowing the user to perform a variety of different functions with the FDC636P. To operate the FDC636P, a gate voltage must be applied between the gate and the source terminals of the transistor. Once the voltage is applied, the current between the source and the drain terminals begins to flow in either direction, allowing for a variety of functions. With low gate-source voltages, there is a high threshold voltage which enables the user to perform a wide range of linear and switching operations. The FDC636P offers a number of different features and benefits. For example, its low on-resistance makes it a great choice for switching applications. The high breakdown voltage ensures that the FDC636P can handle a wide range of voltages. The low input capacitance makes it a great option for high-speed switching applications. Additionally, it is highly temperature resistant and has a low gate discharge current which make it suitable for a variety of applications. Overall, the FDC636P is a great option for applications that require high switching speeds, high voltage breakdowns, and low on-resistance. It is a versatile transistor that is widely used for a variety of power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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